Advanced Atomic Design Lab
The Alex Demkov Group

Books and Book Chapters

Books

  1. M. Frank, V. Narayanan and A. A. Demkov, editors: Thin Films on Silicon: Electronic and Photonic Applications, (World Scientific), in print
  2. A. A. Demkov and A.B. Posadas, Integration of Functional Oxides with Semiconductors, (Springer 2014) - Flyer
  3. A. A. Demkov, B. Taylor, H. R. Harris, J.W. Butterbaugh, and W. Rachmady, editors: CMOS Gate-Stack Scaling . Materials, Interfaces and Reliability Implications, Materials Research Society Symposium, Vol. 1155 (MRS, Warrendale, 2009)
  4. A. A. Demkov and A. Navrotsky, editors: Materials Fundamentals of Gate Dielectrics, (Springer, 2005)

Book Chapters

  1. A.A. Demkov and A.B. Posadas, "Integrated Ferroelectrics" in Thin Films on Si: Electronic and Photonic Applications, Editors: M. Frank, V. Narayanan and A. A. Demkov, World Scientific, in print
  2. A.A. Demkov, K.J. Kormondy and K.D. Fredrickson, "Two-dimensional electron gas at oxide interfaces" in Oxide Materials at the Two-dimensional Limit, Editors: A. Fortunelli and F. Netzer, Springer, in print
  3. A.A. Demkov, X. Luo and O. Sharia, "Theory of HfO2-based high-k dielectric gate stacks" in Fundamentals of III-B Semiconductor MOSFETs, Editors: S. Oktyabrsky and P. Ye, p. 51 (Springer 2010)
  4. A.A. Demkov, "Density functional theory of high-k dielectric gate stacks" in Nanoelectronics and Photonicsi, Editors: A. Korkin, and F. Rosei, p. 171 (Springer, 2008)
  5. Y. Liang and A. A. Demkov, "Epitaxial Oxide Semiconductor Systems" in Materials Fundamentals of Gate Dielectrics, Editors: A. A. Demkov and A. Navrotsky, p. 313 (Springer, 2005)
  6. R. Droopad, K. Eisenbeiser, and A. A. Demkov, "High-K Crystalline Gate Dielectrics: An IC Manufacturer's Perspective" in Alternative Gate Dielectrics, Editors: H. Huff and D. Gilmer, p. 639 (Springer, 2004)
  7. W. Windl, A.A. Demkov, and O.F. Sankey, "Theory of strain and electronic structure of Si1-yCy and Si1-x-yGexCy alloys" in Silicon-Germanium Carbon Alloys, Editors: S. Pantelides and S. Zollner, p. 237 (Taylor & Francis, 2002)

Patents

U.S. Patent Number 17,436,179 "Silicon-On-Oxide-On-Silicon" issued 04/28/2022.

U.S. Patent Number 16,912,316 "Systems And Methods For Integrating A-Axis Oriented Barium Titanate Thin Films On Silicon (001) Via Strain Control" issued 12/31/2020.

U.S. Patent Number 9,293,697 "Efficiently injecting spin-polarized current into semiconductors by interfacing crystalline ferromagnetic oxides directly on the semiconductor materials" issued 03/22/2016

US Patent Number 9,023,662 "Efficiently injecting spin-polarized current into semiconductors by interfacing crystalline ferromagnetic oxides directly on the semiconductor material" issued 05/05/2015.

US Patent Number 7,365,410 "Semiconductor structure having a metallic buffer layer and method for forming" issued 04/29/2008.

US Patent Number 7,235,847 "Semiconductor device having a gate with a thin semiconductive layer" issued 07/26/2007.

US Patent Number 7,141,857 "Semiconductor structures and methods of fabricating semiconductor structures comprising hafnium oxide modified with lanthanum, a lanthanide-series metal, or a combination thereof" issued 11/28/2006.

US Patent Number 7,091,568 "Electronic device including dielectric layer, and a process for forming the electronic device" issued 08/15/2006.

US Patent Number 6,791,125 "Semiconductor device structures utilizing metal sulfides" issued 09/14/2004.

US Patent Number 6,693,033 "Method of removing an amorphous oxide from a monocrystalline surface" issued 02/17/2004.

US Patent Number 6,479,173 "Semiconductor structure having a crystalline alkaline earth metal silicon nitride/oxide interface with silicon" issued 11/12/2002.

Publications

    2022:

  1. A. A. Demkov and A. B. Posadas, "Si-integrated ferroelectrics for photonics and optical computing," MRS Bulletin (2022).
  2. F. Al-Quaiti, P.-Y. Chen, J. G. Ekerdt and A. A. Demkov, "Contributions of bulk and sur face energies in stabilizing metastable polymorphs: A comparative study of group 3 sesquioxides La2O3 , Ga2O3, and In2O3," Phys. Rev. Materials 6, 043606 (2022).
  3. T. Hadamek, A. B. Posadas, F. Al-Quaiti, D. J. Smith, M. R. McCartney, E. Dombrowski an d A. A. Demkov, "Epitaxial growth of β-Ga2O3 on SrTiO3 (001) and SrTiO3-buffered Si (001) substr ates by plasma-assisted molecular beam epitaxy," J. Appl. Phys. 131, 145702 (2022).
  4. W. Li, J. Lee and A. A. Demkov, "Extrinsic magnetoelectric effect at the BaTiO3/Ni interface," J. Appl. Phys. 131, 054101 (2022).
  5. A. B. Posadas, S. Kwon, A. Christensen, M. J. Kim and A. A. Demkov, "Facile growth of epitaxial vanadium monoxide on SrTiO3 via substrate oxygen scavenging," J. Vac. Sci. Technol. A 40, 013416 (2022).
  6. T. T. Le, C. H. Lam, A. B. Posadas, A. A. Demkov and J. G. Ekerdt, "Epitaxial growth by atomic layer deposition and properties of high-k barium strontium titanate on Zintl-templated Ge (001) substrates," J. Vac. Sci. Technol. A 40, 012401 (2022).

    7. 2021:

  7. W. Li, A. K. Hamze and A. A. Demkov, "Tunable giant nonlinear optical susceptibility in BaSnO3 quantum wells," Phys. Rev. B 104, 235419 (2021).
  8. A. B. Posadas, H. Park, M. Reynaud, W. Cao, J. D. Reynolds, W. Guo, V. Jeyaselvan, I. Beskin, G. Mashanovich, J. H. Warner, and A. A. Demkov, "Thick BaTiO3 epitaxial films integrated on Si by RF sputtering for electro-optic modulators in Si photonics," ACS Applied Materials & Interfaces 13, 51230 (2021).
  9. A. A. Demkov, C. Bajaj, J. G. Ekerdt, C. J. Palmström, and S. J. Ben Yoo, "Materials for emergent silicon-integrated optical computing," J. Appl. Phys. 130, 070907 (2021).
  10. I. M. Beskin, S. Kwon, A. B. Posadas, M. J. Kim, and A. A. Demkov, "Growth and structure of strong Pockels material strontium barium niobate (SBN) on SrTiOi3 and Si by molecular beam epitaxy," Adv. Photonics Res. 2, 2100111 (2021).
  11. W. Li, L. Gao, W. Guo, A. B. Posadas and A. A. Demkov, "Two-dimensional carrier gas at complex oxide interfaces: control of functionality," J. Appl. Phys. 130, 024103 (2021).
  12. A. A. Demkov, J. E. Ortmann, M. Reynaud, A. K. Hamze, P. Ponath and W. Li, "Oxide-based Optoelectronics," Phys. Stat. Sol. b, 2000497 (2021).
  13. F. Al-Quaiti and A. A. Demkov, "Theoretical study of GaN (0001) surface reconstructions and La and Ga ad-atoms under N- and Ga-rich conditions," Phys. Rev. Materials 5, 044602 (2021).
  14. A. A. Demkov, J. E. Ortmann, M. Reynaud, A. K. Hamze, P. Ponath and W. Li, "Oxide-Based Optoelectronics," Physica Status Solidi (b), 2021.
  15. W. Guo, A. B. Posadas, and A. A. Demkov, "Epitaxial integration of BaTiO3 on Si for electro-optic applications," J. of Vacuum Science & Technology A 39, 030804 (2021).
  16. T. Hadamek, A. B. Posadas, F. Al-Quaiti, D. J. Smith, M. R. McCartney, and A. A. Demkov, "β-Ga2O3 on Si (001) grown by plasmaassisted MBE with γ-Al2O3 (111) buffer layer: Structural characterization," AIP Advances 11, 045209 (2021).
  17. M. Reynaud, P.-Y. Chen, W. Li, T. Paoletta, S. Kwon, D. H. Lee, I. Beskin, A. B. Posadas, M. J. Kim, C. M. Landis, K. Lai, J. G. Ekerdt and A. A. Demkov, "Electro-optic response in epitaxially stabilized orthorhombic mm2 BaTiO3," Phys. Rev. Materials 5, 035201 (2021).
  18. J.-P.Lehtio, T.Hadamek, M.Kuzmin, P.Laukkanen and A.A.Demkov, "Evidence for the Eu 4f Character of Conduction-Band Edge at the Eu2O3 Surface Studied by Scanning Tunneling Spectroscopy," Surface Science 705, 121763 (2021).
  19. J. E. Ortmann, A. Y. Borisevich, S. Kwon, A. Posadas, M. J. Kim, and A. A. Demkov, "Three-Dimensional Integration of Functional Oxides and Crystalline Silicon for Optical Neuromorphic Computing Using Nanometer-Scale Oxygen Scavenging Barriers," ACS Appl. Nano Mater. 4, 2153–2159 (2021).
  20. T. Paoletta and A. A. Demkov, "Pockels effect in low-temperature rhombohedral BaTiO3," Phys. Rev. B 103, 014303 (2021).

    21. 2020:

  21. J. Geler-Kremer, A. B. Posadas and A. A. Demkov, "Preparation of clean MgO surface by oxygen plasma: Comparison with standard substrate cleaning procedures," J. of Vacuum Science & Technology B 38, 062201 (2020).
  22. B. I. Edmondson, S. Kwon, J. E. Ortmann, A. A. Demkov. M. J. Kim and J. G. Ekerdt, "Composition and annealing effects on the linear electro-optic response of solution-deposited barium strontium titanate," J. of the American Ceramic Society 103 (10), 5700-5705 (2020).
  23. A. K. Hamze, M. Reynaud, J. Geler-Kremer and A. A. Demkov, "Design rules for strong electro-optic materials", npj Computational Materials 6, 130 (2020).
  24. W. Li, L. Gao and A. A. Demkov, "Controlling spin-polarized carriers at the SrTiO3/EuO interface via the ferroelectric field effect", Phys. Rev. B 102, 035308 (2020).
  25. H. W. Wu, P. Ponath, E. L. Lin, R. M. Wallace, C. Young, J. G. Ekerdt, A. A. Demkov, M. R. McCartney, and D. J. Smith, "Dielectric breakdown in epitaxial BaTiO3 thin films", J. of Vac. Sci. Technol. B 38, 044007 (2020).
  26. J. Nordlander, F. Eltes, M. Reynaud, J. Nrnberg, G. De Luca, D. Caimi, A. A. Demkov, S. Abel, M. Fiebig, J. Fompeyrine, and M. Trassin, "Ferroelectric domain architecture and poling of BaTiO3 on Si", Phys. Rev. Materials 4, 034406 (2020).
  27. E. L. Lin, A. B. Posadas, L. Zheng, H. W. Wu, P.-Y. Chen, B. M. Coffey, K. Lai, A. A. Demkov, D. J. Smith, J. G. Ekerdt, "Epitaxial integration of ferroelectric and conductive perovskites on silicon", Journal of Vacuum Science & Technology A 38, 022403 (2020).
  28. T. Hadamek, S. Rangan, J. Viereck, D. Shin, A. B. Posadas, R. A. Bartynski, A. A. Demkov, "Stoichiometry, band alignment, and electronic structure of Eu2O3 thin films studied by direct and inverse photoemission: A reevaluation of the electronic band structure", J. Appl. Phys. 127, 074101 (2020).
  29. W. Guo, A. B. Posadas, A. A. Demkov, "Deal-Grove-like thermal oxidation of Si (001) buried under a thin layer of SrTiO3", J. Appl. Phys. 127, 055302 (2020).
  30. P. Chen, T. Hadamek, S. Kwon, F. Al-Quaiti, A. B. Posadas, M. J. Kim, A. A. Demkov and J. G. Ekerdt, "Role of template layers for heteroepitaxial growth of lanthanum oxide on GaN (0001 ) via atomic layer deposition", Journal of Vacuum Science & Technology A 38, 012403 (2020).

    31. 2019:

  31. J. E. Ortmann, M. R. McCartney, A. B. Posadas, D. Smith and A. A. Demkov, "Epitaxial Oxides on Glass: A Platform for Integrated Oxide Devices", ACS Appl. Nano Mater., 2, 12, 7713-7718 (2019).
  32. B. I. Edmondson, S. Kwon, C. H. Lam, J. E. Ortmann, A. A. Demkov, M. J. Kim and J. G. Ekerdt, "Epitaxial, electro-optically active barium titanate thin films on silicon by chemical solution deposition" J. Amer. Ceram. Soc. 103, 1209 (2019).
  33. J. E. Ortmann, F. Eltes, D. Caimi, N. Meier, A. A. Demkov, L. Czornomaz, J. Fompeyrine and S. Abel. "Ultra-Low-Power Tuning in Hybrid Barium Titanate-Silicon Nitride Electro-optic Devices on Silicon" ACS Photonics 6 (11), 2677-2684 (2019).
  34. W. Li, A. B. Posadas and A. A. Demkov, "Band offset modulation in Si-EuO heterostructures via controlled interface formation" Phys. Rev. B 100, 155303 (2019).
  35. A. B. Posadas, A. Kvit and A. A. Demkov, "Growth of NbO2 thin films on GaN(0001) by molecular beam epitaxy" Thin Solid Films 691, 137603 (2019).
  36. D. Shin, M. V. Fischetti and A. A. Demkov, "Electron pairing by remote-phonon scattering in oxide-supported graphene" Phys. Rev. B 100, 125417 (2019).
  37. L. Gao, W. Guo, A. B. Posadas and A. A. Demkov, "Unusual band alignment at the Eu/EuO interface," Phys. Rev. Materials 3, 094403(2019).
  38. P. Y. Chen, C. H. Lam, B. Edmondson, A. B. Posadas, A. A. Demkov and J. G. Ekerdt, "Epitaxial BaSnO3 and SrSnO3 perovskite growth on SrTiO3 (001) via atomic layer deposition," J. of Vac. Sci. Tech. A 37, 050902 (2019).
  39. E. L. Lin, A. B. Posadas, L. Zheng, J. E. Ortmann, S. Abel, J. Fompeyrine, K. Lai, A. A. Demkov and J. G. Ekerdt "Atomic Layer Deposition of Epitaxial Ferroelectric Barium Titanate on Si(001) for Electronic and Photonic Applications," J. Appl. Phys. 126, 064101 (2019).
  40. J. E. Ortmann, M. A. Duncan and A. A. Demkov, "Designing terahertz electro-optic devices from the SrTiO3/LaAlO3 materials system," Optical Materials Express 9, 2982 (2019).
  41. D. Shin, T. Hadamek, and A. A. Demkov, "Rare-earth ad atoms on GaN (0001)," Phys. Rev. Materials 3, 044607 (2019).
  42. J. E. Ortmann, S. Kwon, A. B. Posadas, M. J. Kim and A. A. Demkov, "Monolithic Integration of Transition Metal Oxide Multiple Quantum Wells on Silicon (001)," J. Appl. Phys. 125, 155302 (2019).
  43. S. Abel, F. Eltes, J. E. Ortmann, A. Messner, P. Castera, T. Wagner, D. Urbonas, A. Rosa, A. M. Gutierrez, D. Tulli, P. Ma, B. Baeuerle, A. Josten, W. Heni, D. Caimi, A. A. Demkov, J. Leuthold, P. Sanchis, J. Fompeyrine, "Large Pockels effect in micro- and nano-structured barium titanate integrated on silicon," Nature Materials 18, 42 (2019).

    44. 2018:

  44. W. Guo, A. B. Posadas, S. Lu, D. J. Smith and A. A. Demkov, "Oxide growth without oxygen: EuO epitaxy on SrTiOi3 (001) by oxygen scavenging," J. Appl. Phys. 124, 235301 (2018).
  45. B. I. Edmondson, S. Liu, S. Lu, H.-W. Wu, A. B. Posadas, D. J. Smith, X. P. A. Gao, A. A. Demkov, and J. G. Ekerdt, "Effect of SrTiO3 oxygen vacancies on the conductivity of LaTiO3/SrTiO3 heterostructures," J. Appl. Phys. 124, 185303 (2018).
  46. A. K. Hamze and A. A. Demkov, "First-principles study of the linear electro-optic effect in strained SrTiO3," Phys. Rev. Mater. 2, 115202 (2018).
  47. S. Lu, K. J. Kormondy, A. A. Demkov and D. J. Smith, "An EELS signal-from-background separation algorithm for spectral line-scan/image," Ultramicroscopy 195, 25 (2018).
  48. K. J. Kormondy, Y. Cho, A. B. Posadas, L. Zheng, K. Lai, Q. Wang, M. J. Kim, Q. He, A. Y. Borisevich, M. C. Downer, and A. A. Demkov, "Piezoelectric modulation of nonlinear optical response in BaTiO3 thin film," Appl. Phys. Lett. 113, 132902 (2018).
  49. K. D. Fredrickson, V. V. Vogler-Neuling, K. J. Kormondy, D. Caimi, F. Eltes, M. Sousa, J. Fompeyrine, S. Abel, and A. A. Demkov, "Strain enhancement of the electro-optical response in BaTiO3 films integrated on Si (001)," Phys. Rev. B 98, 075136 (2018).
  50. S. Hu, L. Ji, P.-Y. Chen, B. I. Edmondson, H.-L. Chang, A. Posadas, H.-W. Wu, E. T. Yu, D. J. Smith, A. A. Demkov, and J. G. Ekerdt, "Crystalline SrZrO3 deposition on Ge (001) by atomic layer deposition for high-k dielectric applications," J. Appl. Phys. 124, 044102 (2018).
  51. J. E. Ortmann, N. Nookala, Q. He, L. Gao, C. Lin, A. B. Posadas, A. Y. Borisevich, M. A. Belkin, and A. A. Demkov, "Quantum confinement in oxide heterostructures: Room-temperature intersubband absorption in SrTiO3/LaAlO3 multiple quantum wells," ACS NANO 12, 7682 (2018).
  52. J. E. Ortmann, A. B. Posadas and A. A. Demkov, "The MBE growth of arbitrarily thick SrTiO3/LaAlO3 quantum well heterostructures for use in next-generation optoelectronic devices," J. Appl. Phys. 124, 015301 (2018).
  53. K. J. Kormondy, L. Gao, X. Li, S. Lu, A. B. Posadas, S. Shen, M. Tsoi, M. R. McCartney, D. J. Smith, J. Zhou, L. L. Lev, M. Husanu, V. N. Strocov, and A. A. Demkov, "Large positive linear magnetoresistance in the two-dimensional t2g electron gas at the EuO/SrTiO3 interface," Scientific Reports 8, 7721 (2018).
  54. P. Ponath, A. B. Posadas, M. Schmidt, A.-M. Kelleher, M. White, D. O’Connell, P. Hurley, R. Duffy and A. A. Demkov, "Monolithic integration of patterned BaTiO3 thin films on Ge wafers," J. Vac. Sci. and Technol. B 36 (2018).
  55. P. Ponath, A. K. Hamze, A. B. Posadas, S. Lu, H.-W. Wu, D. J. Smith, and A. A. Demkov, "Surface structure analysis of Eu Zintl template on Ge (001)," Surf. Sci. 674, 94 (2018).
  56. Y. Cho, P. Ponath, L. Zheng, B. Hatanpaa, K. Lai, A. A. Demkov, and M. C. Downer, "Polarization Retention in Ultra-thin Barium Titanate Films on Ge(001)," Appl. Phys. Lett. 112, 162901 (2018).
  57. L. Gao and A. A. Demkov, "Spin-polarized two-dimensional t2g electron gas: Ab initio study of EuO interface with oxygen-deficient SrTiO3," Phys. Rev. B 97, 125305 (2018).
  58. D. Shin and A. A. Demkov, "Theoretical investigation of the band alignment of graphene on a polar SrTiO3 (111) surface," Phys. Rev. B 97, 075423 (2018).

    59. 2017:

  59. D. J. Smith, H. W. Wu , S. Lu , T. Aoki , P. Ponath , K. D. Fredrickson, M. D. McDaniel, E. Lin, A. B. Posadas, A. A. Demkov , J. G. Ekerdt and M. R. McCartney, "Recent studies of oxide-semiconductor heterostructures using aberration-corrected scanning transmission electron microscopy," J. of Mater. Res. 32, 912 (2017).
  60. P-Y. Chen, A. B. Posadas, S. Kwon, Q. Wang, M. J. Kim, .A. A. Demkov and J. G Ekerdt, "Cubic Crystalline Erbium Oxide Growth on GaN (0001) by Atomic Layer Deposition," J. Appl. Phys. 122, 215302 (2017).
  61. L. Gao, J. Souto-Casares, J. R. Chelikowsky, and A. A. Demkov, "Orientation dependence of the work function for metal nanocrystals," J. Chem. Phys. 147, 214301 (2017).
  62. W. Guo, A. B. Posadas, and A. A. Demkov, "Temperature Dependence of the Morphology and Electronic Structure of Ultrathin Platinum on TiO2-teminatied SrTiO3 (001)," J. Vac. Sci. and Technol. B. 35, 061203 (2017).
  63. T. Hadamek, D. Shin, A. B. Posadas, A. A. Demkov, S. Kwon, Q. Wang and M. Kim, "Hexagonal to monoclinic phase transformation in Eu2O3 thin films grown on GaN (0001)," Appl. Phys. Lett. 111, 142901 (2017).
  64. E. L. Lin, A. B. Posadas, H. W. Wu, D. J. Smith, A. A. Demkov and J. G. Ekerdt, "Epitaxial Growth of Barium Titanate Thin Films on Germanium via Atomic Layer Deposition," J. of Crystal Growth 476, 6 (2017).
  65. H.W. Wu , S. Lu , T. Aoki , P. Ponath , J. G. Ekerdt , A. A. Demkov , M. R. McCartney and D. J. Smith, "Integration of ferroelectric BaTiO3 with Ge: the role of a SrTiO3 buffer layer investigated using aberration-corrected STEM," Appl. Phys. Lett. 110, 252901 (2017).
  66. J. Park, T. Hadamek, A. B. Posadas, E. Cha, A. A. Demkov and H. Hwang, "Multi-layered NiOy/NbOx/NiOy fast drift-free threshold switch with high on/off ratio for selector application," Scientific Reports 7, 4068 (2017).
  67. L. Gao, E. Yalon, A. R. Chew, S. Deshmukh, A. Salleo, E. Pop and A. A. Demkov, "Effect of oxygen vacancies and strain on the phonon spectrum of HfO2 thin films," J. Appl. Phys. 121, 224101 (2017).
  68. P. Ponath, A. B. Posadas and A. A. Demkov, "Ge (001) surface cleaning methods for device integration," Appl. Phys. Rev. 4, 021308 (2017).
  69. A. B. Posadas, K. J. Kormondy, W. Guo, P. Ponath, J. Geler0Kremer, T. Hadamek, and A. A. Demkov, "Scavenging of oxygen from SrTiO3 during oxide thin film deposition and the formation of interfacial 2DEGs," J. Appl. Phys. 121, 105302 (2017).
  70. S. Hu, E. Lin, A. Hamze, A. B. Posadas, H. W. Wu, D. J. Smith, A. A. Demkov, and J. G. Ekerdt, "Zintl layer formation during perovskite atomic layer deposition on Ge (001)," J. Chem. Phys., 146, 052817 (2017).
  71. K. J. Kormondy, Y. Popoff, M. Sousa, F. Eltes, D. Caimi, M. D. Rossell, M. Fiebig, P. Hoffmann, C. Marchiori, M. Reinke, M. Trassin, A. A. Demkov, J. Fompeyrine, and S. Abel, "Microstructure and ferroelectricity of BaTiO3 thin films on Si for integrated photonics," Nanotechnology 28, 075706 (2017).

    72. 2016:

  72. A. R. Dhamdhere, T. Hadamek, A. B. Posadas, A. A. Demkov, and D. J. Smith, "Structural characterization of niobium oxide thin films grown on SrTiO3(111) and (La,Sr)(Al,Ta)O3(111)," J. Appl. Phys. 120, 245302 (2016).
  73. K. D. Fredrickson and A. A. Demkov, "Surface-hydrogen-induced metallization and rumpling in thin BaTiO3," Phys. Rev. B 94, 245425 (2016).
  74. P. Ponath, A. O'Hara, H.-X. Cao, A. B. Posadas, R. Vasudevan, M. B. Okatan, S. Jesse, M. Berg, Z. Li, D. Zhang, A. J. Kellock, A. de Lozanne, J. Zhou, S. Kalinin, D. J. Smith, A. A. Demkov, "The contradictory nature of Co doping in ferroelectric BaTiO3," Phys. Rev. B. 94, 205121 (2016).
  75. S. Hu, M. D. McDaniel, A. B. Posadas, C. Hu, H.-W., Wu, E. T. Yu, D. J. Smith, A. A. Demkov and J. G. Ekerdt, "Monolithic integration of perovskites on Ge(001) by atomic layer deposition: a case study with SrHfxTi1-xO3," MRS Comm. 6, 125 (2016).
  76. Smith, D.J., Wu, H., Lu, S., Aoki, T., Ponath, P., Fredrickson, K., McDaniel, M.D., Lin, E., Posadas, A.B., Demkov, A.A., Ekerdt, J. and McCartney, M.R. "Recent studies of oxide-semiconductor heterostructures using aberration-corrected scanning transmission electron microscopy," Journal of Materials Research, pp. 1-9 (2016).
  77. K. D. Fredrickson, M. D. McDaniel, A. Slepko, J. G. Ekerdt, and A. A. Demkov, "Theoretical modeling and experimental observations of the atomic layer deposition of SrO using a cyclopentadienyl Sr precursor," J. Chem. Phys. 145, 064701 (2016).
  78. K. D. Fredrickson, H. Seo and A. A. Demkov, "Mechanism of oxidation protection of the Si(001) surface by sub-monolayer Sr template," J. Appl. Phys. 120, 065301 (2016).
  79. K. D. Fredrickson, C. Lin, S. Zollner, and A. A. Demkov, "Theoretical study of negative optical mode splitting in LaAlO3," Phys. Rev. B 93, 134301 (2016).
  80. K. D. Fredrickson and A. A. Demkov, "Spin-polarized, orbital-selected hole gas at the EuO/Pt interface," J. Appl. Phys. 119, 095309 (2016).
  81. T. Hadamek, A. B. Posadas, A. Dhamdhere, D. J. Smith, and A. A. Demkov, "Spectral identification scheme for epitaxially grown single-phase niobium dioxide," J. Appl. Phys. 119, 095308 (2016).
  82. H.-W. Wu, T. Aoki, A. B. Posadas, A. A. Demkov, and D. J. Smith, "Anti-phase boundaries at the SrTiO3/Si (001) interface studied using aberration-corrected scanning transmission electron microscopy," Appl. Phys. Lett. 108, 091605 (2016)
  83. C. Hu, M. D. McDaniel, A. Jiang, A. Posadas, A. A. Demkov, J. G. Ekerdt, and E. T. Yu, "A Low-Leakage Epitaxial High-k Gate Oxide for Germanium Metal-Oxide-Semiconductor Devices," AC Appl. Mater. Interfaces 8, 5416 (2016)
  84. S. Lu, K. J. Kormondy, T. Q. Ngo, T. Aoki, A. B. Posadas, J. G. Ekerdt, A. A. Demkov, M. R. McCartney, and D. J. Smith, "Spectrum and phase mapping across the epitaxial γ-Al2O3/SrTiO3 interface," Appl. Phys. Lett. 108, 051606 (2016).

    85. 2015:

  85. H. Seo and A. A. Demkov, "Early stages of the Schottky barrier formation in submonolayer Pt on SrTiO3 (001)," Phys. Rev. B 92, 245301 (2015).
  86. M. D. McDaniel, T. Q. Ngo, S. Hu, A. Posadas, A. A. Demkov, and J. G. Ekerdt, "Atomic layer deposition of perovskite oxides and their epitaxial integration with Si, Ge, and other semiconductors," Appl. Phys. Rev. 2, 041301 (2015).
  87. C. Lin and A. A. Demkov, "Quench dynamics of Anderson impurity model using configuration interaction method," Phys. Rev. B 92, 155135 (2015).
  88. R. C. Hatch, M. Choi, A. B. Posadas, and A. A. Demkov, "Comparison of acid-and non-acid-based surface preparations of Nb-doped SrTiO3 (001)," J. Vac. Sci. Technol. B 33, 061204 (2015).
  89. X. Luo and A. A. Demkov, "Structure, thermodynamics and crystallization of amorphous hafnia," J. Appl. Phys. 118, 124105 (2015).
  90. T. Q. Ngo, N. J. Goble, A. Posadas, K. J. Kormondy, S. Lu, M. D. McDaniel, J. Jordan-Sweet, D. J. Smith, X. P. A. Gao, a. A. Demkov, and J. G. Ekerdt, "Quasi-Two-Dimensional Electron Gas at the Interface of γ-Al2O3/SrTiO3 Heterostructures Grown by Atomic Layer Deposition," J. Appl. Phys. 118, 115303 (2015).
  91. C. Lin, A. Posadas, T. Hadamek, and A. A. Demkov, "Final-state effect on x-ray photoelectron spectrum of nominally d1 and n-doped d0 transition-metal oxides," Phys. Rev. B 92, 035110(2015)
  92. C. Lin, D. Shin, and A. A. Demkov, "Localized states induced by an oxygen vacancy in rutile TiO2," J. Appl. Phys. 117, 225703 (2015).
  93. M. Choi, C. Lin, M. Butcher, C. Rodriguez, Q. He, A. Posadas, A. Y. Borisevich, S. Zollner, and A. A. Demkov, "Quantum confinement in transition metal oxide quantum wells," Appl. Phys. Lett. 106, 192902 (2015).
  94. A. A. Demkov, P. Ponath, K. Fredrickson, A. B. Posadas, M. D. McDaniel, T. Q. Ngo, and J. G. Ekerdt, "Integrated films of transition metal oxides for information technology," Microelectron. Eng. 147, 285 (2015).
  95. K. J. Kormondy, S. Abel, F. Fallegger, Y. Popoff, P. Ponath, A. B. Posadas, M. Sousa, D. Caimi, H. Siegwart, E. Uccelli, L. Czornomaz, C. Marchiori, J. Fompeyrine, and A. A. Demkov, "Analysis of the Pockels effect in ferroelectric barium titanate thin films on Si(001)," Microelectron. Eng. 147, 215 (2015).
  96. T. Q. Ngo, M. D. McDaniel, A. Posadas, A. A. Demkov, and J. G. Ekerdt, "Oxygen Vacancies at the γ-Al2O3/STO Heterointerface Grown by Atomic Layer Deposition," Mater. Res. Soc. Symp. Proc. 1730, 294 (2015).
  97. A. O'Hara and A. A. Demkov, "Nature of the metal-insulator transition in NbO2," Phys. Rev. B 91, 094305 (2015)
  98. K. D. Fredrickson and A. A. Demkov, "Switchable conductivity at the ferroelectric interface: Nonpolar oxides," Phys. Rev. B 91, 115126 (2015)
  99. K. Kormondy, A. Posadas, T. Q. Ngo, S. Lu, J. L. Jordan-Sweet, X. Guo, D. J. Smith, M. R. McCartney, J. G. Ekerdt, and A. A. Demkov, "Quasi-two-dimensional electron gas at the epitaxial alumina/SrTiO3 interface: control of oxygen vacancies," J. Appl. Phys. 117, 095303 (2015).
  100. A. Slepko and A. A. Demkov, "Hydroxyapatite: Vibrational spectra and monoclinic to hexagonal phase transition," J. Appl. Phys. 117, 074701 (2015).
  101. M. D. McDaniel, C. Hu, S. Lu, T. Ngo, A. Posadas, A. Jiang, D. J. Smith, E. T. Yu, A. A. Demkov, J. G. Ekerdt, "Atomic layer deposition of crystalline SrHfO3 directly on Ge (001) for high-k dielectric applications," J. Appl. Phys. 117, 054101 (2015).
  102. C. Lin, A. Posadas, M. Choi, and A. A. Demkov, "Optical properties of transition metal oxide quantum wells," J. Appl. Phys. 117, 034304 (2015).
  103. P. Ponath, K. Fredrickson, A. B. Posadas, Y. Ren, X. Wu, R. K. Vasudevan, M. B. Okatan, S. Jesse, T. Aoki, M. R. McCartney, D. J. Smith, S. V. Kalinin, K. Lai, and A. A. Demkov, "Carrier density modulation in a germanium heterostructure by ferroelectric switching," Nat. Comm. 6, 6067 (2015).

    104. 2014:

  104. H. Seo and A. A. Demkov, "Band alignment in visible-light photo-active CoO/SrTiO3 (001) heterostructures," J. Appl. Phys. 116, 245305 (2014).
  105. L. Ji, M. D. McDaniel, L. Tao, X. Li, A. B. Posadas, Y.-F. Chang, A. A. Demkov, J. G. Ekerdt, D. Akinwande, R. S. Ruoff, J. C. Lee, and E. T. Yu, "Atomic Scale Engineering of Metal-Oxide-Semiconductor Photoelectrodes for Energy Harvesting Application Integrated with Graphene and Epitaxy SrTiO3," IEEE - Int. Electron. Devices Meet. (IEDM) 2014, 8.6.1.
  106. C. Lin and A. A. Demkov, "Efficient and stable orbital-searching algorithm for the configuration interaction method and its application to quantum impurity problems," Phys. Rev. B 90, 235122 (2014).
  107. A. O'Hara, T. N. Nunley, A. B. Posadas, S. Zollner, and A. A. Demkov, "Electronic and Optical Properties of NbO2," J. Appl. Phys. 116, 213705 (2014).
  108. L. Ji, M. D. McDaniel, S. Wang, A. B. Posadas, X. Li, H. Huang, J. C. Lee, A. A. Demkov, A. J. Bard, J. G. Ekerdt, and E. T. Yu, "A silicon-based photocathode for water reduction with an epitaxial SrTiO3 protection layer and a nanostructured catalyst," Nat. Nanotechnol. (2014)
  109. C. Lin and A. A. Demkov, "Consequences of oxygen vacancy correlations at the SrTiO3 interface," Phys. Rev. Lett. 113, 157602 (2014).
  110. C. Mitra, C. Lin, A. B. Posadas, and A. A. Demkov, "Role of oxygen vacancies in room-temperature ferromagnetism in cobalt-substituted SrTiO3," Phys. Rev. B 90, 125130 (2014).
  111. E. T. Yu, C. Hu, M. D. McDaniel, A. B. Posadas, A. A. Demkov, and J. G. Ekerdt, "Resistive Switching Characteristics and Controllable Quantized Conductance in Single-Crystal Anatase TiO2 on Si (001)," ECS Trans. 64, 147 (2014).
  112. C. Q. Hu, M. D. McDaniel, A. B. Posadas, A. A. Demkov, J. G Ekerdt, and E. T. Yu, "Highly Controllable and Stable Quantized Conductance and Resistive Switching Mechanism in Single-Crystal TiO2 Resistive Memory on Silicon,'' Nano Lett. 14, 4360 (2014).
  113. M. Choi, C. Dubourdieu, A. J. Kellock, K. L. Lee, R. A. Haight, A. Pyzyn, M. M. Frank, A. A. Demkov, and V. Narayanan, "Tunable electrical properties of TaNx thin fimls grown by ionized physical vapor deposition,'' J. Vac. Sci. Technol. B 32, 051202 (2014).
  114. M. Choi, A. B. Posadas, C. A. Rodriguez, A. O'Hara, H. Seinige, A. J. Kellock, M. M. Frank, M. Tsoi, S. Zollner, V. Narayanan, and A. A. Demkov, "Structural, optical, and electrical properties of strained La-doped SrTiO3," J. Appl. Phys. 116, 043705 (2014).
  115. R. Dargis, A. Clark, F. E. Arkun, T. Grinys, R. Tomasiunas, A. O'Hara, and A. A. Demkov, "Monolithic integration of rare-earth oxides and semiconductors for on-silicon technology," J. Vac. Sci. Technol. A 32, 041506 (2014).
  116. K. J. Kormondy, A. B. Posadas, A. Slepko, A. Dhamdhere, D. J. Smith, K. N. Mitchell, T. I. Willett-Gies, S. Zollner, L. G. Marshall, J. Zhou, and A. A. Demkov, "Epitaxy of polar semiconductor Co3O4: growth, structure, and characterization," J. Appl. Phys. 115, 243708 (2014).
  117. K. D. Fredrickson, P. Ponath, A. B. Posadas, M. R. McCartney, T. Aoki, D. J. Smith, and A. A. Demkov, "Atomic and electronic structure of the ferroelectric BaTiO3-Ge(001) interface," Appl. Phys. Lett. 104, 242908 (2014).
  118. M. D. McDaniel, A. Posadas, T. Q. Ngo, C. M. Karako, J. Bruley, M. M. Frank, V. Narayanan, A. A. Demkov, and J. G. Ekerdt, "Incorporation of La in epitaxial SrTiO3 thin films grown by atomic layer deposition on SrTiO3-buffered Si (001) substrates," J. Appl. Phys. 115, 224108 (2014)
  119. A. O'Hara and A. A. Demkov, "Oxygen and nitrogen diffusion in α-Hafnium from first principles," Appl. Phys. Lett. 104, 211909 (2014).
  120. A. O'Hara, G. Bersuker, and A. A. Demkov, "Assessing hafnium on hafnia as an oxygen getter," J. Appl. Phys. 115, 183703 (2014).
  121. M. D. McDaniel, T. Q. Ngo, A. Posadas, C. Hu, S. Lu, D. J. Smith, E. T. Yu, A. A. Demkov, and J. G. Ekerdt, "A Chemical Route to Monolithic Integration of Crystalline Oxides on Semiconductors," Advanced Materials Interfaces, 1400081 (2014).
  122. H. Seo, R. C. Hatch, P. Ponath, M. Choi, A. B. Posadas, and A. A. Demkov, "Critical differences in the surface electronic structure of Ge(001) and Si(001): Ab initio theory and angle-resolved photoemission spectroscopy," Phys. Rev. B 89, 115318 (2014)
  123. T. Q. Ngo, M. D. McDaniel, A. Posadas, A. A. Demkov, and J. G. Ekerdt, "Growth of crystalline LaAlO3 by atomic layer deposition," Proc. SPIE 8987 (Oxide-based Materials and Devices V), 898712 (2014).
  124. A. B. Posadas, A. O'Hara, S. Rangan, R. A. Bartynski, and A. A. Demkov, "Band gap of epitaxial in-plane-dimerized single-phase NbO2 films," Appl. Phys. Lett. 104, 092901 (2014).
  125. T. Q. Ngo, A. B. Posadas, M. D. McDaniel, C.Hu, J. Bruley, E. T. Yu, A. A. Demkov, and J. G. Eerdt, "Epitaxial c-axis oriented BaTiO3-buffered Si(001) by atomic layer deposition," Appl. Phys. Lett. 104, 082910 (2014)
  126. A. A. Demkov and A. B. Posadas, "Integration of Functional Oxides with Semiconductors (Springbriefs in Materials)," Springer, New York (2014).

    127. 2013:

  127. C. Lin and A. A. Demkov, "Electron Correlation in Oxygen Vacancy in SrTiO3," Phys. Rev. Lett. 111, 217601 (2013)
  128. C. Hu, K. W. Park, A. Posadas, J. L. Jordan-Sweet, A. A. Demkov, and E. T. Yu, "Voltage-controlled ferromagnetism and magnetoresistance in LaCoO3/SrTiO3 heterostructures," J. Appl. Phys. 114, 183909 (2013).
  129. A. B. Posadas, C. Lin, A. A. Demkov, and S. Zollner, "Bandgap engineering in perovskite oxides: Al-doped SrTiO3," Appl. Phys. Lett. 103, 142906 (2013).
  130. A. Rüegg, C. Mitra, A. A. Demkov, and G. A. Fiete, "Lattice distortion effects on topological phases in (LaNiO3)2/(LaAlO3)N heterostructures grown along the [111] direction," Phys. Rev. B 88, 115146 (2013).
  131. C. Dubourdieu, J. Bruley, T. M. Arruda, A. Posadas, J. Jordan-Sweet, M. M. Frank, E. Cartier, D. J. Frank, S. V. Kalinin, A. A. Demkov, and V. Narayanan, "Switching of ferroelectric polarization in epitaxial BaTiO3 films on silicon without a conducting bottom electrode," Nat. Nanotechnol. 8, 748 (2013).
  132. R. C. Hatch, K. D. Fredrickson, M. Choi, C. Lin, H. Seo, A. B. Posadas, and A. A. Demkov, "Surface electronic structure for various surface preparations of Nb-doped SrTiO3 (001)," J. Appl. Phys. 114, 103710 (2013).
  133. A. O'Hara and A. A. Demkov, "Can nitrogen-based cobalt pnictides exist?," J. Appl. Phys. 114, 093701 (2013)
  134. T. Q. Ngo, A. Posadas, H. Seo, S. Hoang, M. D. McDaniel, D. Utess, D. H. Triyoso, C. B. Mullins, A. A. Demkov, and J. G. Ekerdt, "Atomic layer deposition of photoactive CoO/SrTiO3 and CoO/TiO2 on Si(001) for visible light driven photoelectrochemical water oxidation," J. Appl. Phys. 114, 084901 (2013).
  135. R. Dargis, A. Clark, E. Arkun, R. Roucka, R. Smith, A. A. Demkov and M. Lebby, "Growth and application of epitaxial heterostructures with polymorphous rare-earth oxides," J. Cryst. Growth 378, 177 (2013).
  136. A. A. Demkov, A. B. Posadas, H. Seo, M. Choi, K. J. Kormondy, P. Ponath, R. C. Hatch, M. D. McDaniel, T. Q. Ngo and J. G. Ekerdt, "Monolithic Integration of Oxides on Semiconductors," ECS Transactions 54, 255 (2013).
  137. A. Slepko and A. A. Demkov, "First principles study of hydroxyapatite surface," J. Chem. Phys. 139, 044714 (2013)
  138. L. Schlipf, A. Slepko, A. B. Posadas, H. Seinige, A. Dhamdhere, M. Tsoi, D. J. Smith and A. A. Demkov, "Epitaxial Zintl aluminide SrAl4 grown on a LaAlO3 substrate," Phys. Rev. B 88, 045314 (2013)
  139. C. Lin and A. A. Demkov, "Efficient variational approach to the impurity problem and its application to the dynamical mean-field theory," Phys. Rev. N 88, 035123 (2013)
  140. H. Seo, M. Choi, A. B. Posadas, R. C. Hatch and A. A. Demkov, "Combined in-situe photoemission spectroscopy and density functional theory of the Sr Zintl template for oxide heteroepitaxy on Si(001)," J. Vac. Sci. Technol. B 31, 04D107 (2013)
  141. K. Fredrickson, A. B. Posadas, A. A. Demkov, C. Dubourdieu and J. Bruley, "Wetting at the BaTiO3 interface," J. Appl. Phys. 113, 184102 (2013).
  142. A. Posadas, C. Mitra, C. Lin, A. Dhamdere, D. J. Smith, M. Tsoi and A. A. Demkov, "Oxygen vacancy-mediated room-temperature ferromagnetism in insulating cobalt-substituted SrTiO3 epitaxially integrated with silicon," Phys. Rev. B 87, 144422 (2013).
  143. J. Lee, C. Lin and A. A. Demkov, "Metal-induced charge transfer, structural distortion, and orbital order in SrTiO3 thin films," Phys. Rev. B 87, 165103 (2013)
  144. P. Ponath, A. B. Posadas, R. C. Hatch and A. A. Demkov, "Preparation of a clean Ge(001) surface using oxygen plasma cleaning, " J. Vac. Sci. Technol. B 31, 031201 (2013)
  145. T. Q. Ngo, A. Posadas, M. D. McDaniel, D. A. Ferrer, J. Bruley, C. Breslin, A. A. Demkov, and J. G. Ekerdt, "Epitaxial growth of LaAlO3 on SrTiO3-buffered Si (001) substrates by atomic layer deposition," J. Cryst. Growth 363, 150 (2013)
  146. M. Choi, A. B. Posadas, H. Seo, R. C. Hatch, and A. A. Demkov, "Charge transfer in Sr Zintl template on Si(001)," Appl. Phys. Lett. 102, 031604 (2013).
  147. A. Slepko, J. Ramdani, and A. A. Demkov, "Schottky barrier at the AlN/metal junction", J. Appl. Phys. 113, 013707 (2013).
  148. M. D. McDaniel, A. Posadas, T. Q. Ngo, A. Dhamdhere, D. J. Smith, A. A. Demkov, and J. G. Ekerdt, "Epitaxial strontium titanate films grown by atomic layer deposition on SrTiO3-buffered Si(001) substrates", J. Vac. Sci. Technol. A 31, 01A136 (2013).

    149. 2012:

  149. R. Dargis, A. Clark, E. Arkun, R. Roucka, R. Smith, A. A. Demkov, and M. Lebby, "Growth and application of epitaxial heterostructures with polymorphous rare earth oxides," J. Cryst. Growth (2012).
  150. G. S. Rohrer, M. Affatigato, M. Backhaus, R. K. Bordia, H. M. Chan, S. Curtarolo, A. Demkov, J. N. Eckstein, K. T. Faber, J. E. Garay, Y. Gogotsi, L. Huang, L. E. Jones, S. V. Kalinin, R. J. Lad, C. G. Levi, J. Levy, J-P. Maria, L. Mattos Jr., A. Navrotsky, N. Orlovskaya, Carlo Pantano, J. F. Stebbins, T. S. Sudarshan, T. Tani, and K. S. Weil, "Challenges in Ceramic Science: A Report from the Workshop on Emerging Research Areas in Ceramic Science," J. Am. Ceram. Soc. 95, 3699 (2012).
  151. C. Lin, C. Mitra, and A. A. Demkov, "Orbital ordering under reduced symmetry in transition metal perovskites: Oxygen vacancy in SrTiO3," Phys. Rev. B. 86, 161102(R) (2012).
  152. C. Mitra, C. Lin, J. Robertson, and A. A. Demkov, "Electronic structure of oxygen vacancies in SrTiO3 and LaAlO3," Phys. Rev. B 86, 155105 (2012).
  153. H. Seo, A. B. Posadas, C. Mitra, J. Ramdani, A. V. Kvit, and A. A. Demkov, "Band alignment and electronic structure of the anatase TiO2/SrTiO3 heterostructure integrated on Si(001)," Phys. Rev. B 86, 075301 (2012).
  154. M.D. McDaniel, A. Posadas, T. Wang, A. A. Demkov, and J. G. Ekerdt, "Growth and characterization of epitaxial anatase TiO2(001) on SrTiO3-buffered Si(001) using atomic layer deposition," Thin Solid Films 520, 6525 (2012).
  155. H. Seo, A. B. Posadas, and A.A. Demkov, "First-principles study of the growth thermodynamics of Pt on SrTiO3 (001)", J. Vac. Sci. Technol. B 30, 04E108 (2012).
  156. H. Seo, A. B. Posadas, and A.A. Demkov, "Strain-driven spin state transition and superexchange interaction in LaCoO3: Ab initio study", Phys. Rev. B 86, 014430 (2012).
  157. M.D. McDaniel, A. Posadas, T.Q. Ngo, A. Dhamdhere, D.J. Smith, A.A. Demkov and J.G. Ekerdt , "Growth of epitaxial oxides on silicon using atomic layer deposition: crystallization and annealing of TiO2 on SrTiO3-buffered Si(001)", J. Vac. Sci. Technol. B 30, 04E111 (2012).
  158. A. Rüegg, C. Mitra, A.A. Demkov, and G.A. Fiete "Electronic structure of (LaNiO3)2/(LaAlO3)N heterostructures grown along [111]", Phys. Rev. B 85, 245131 (2012).
  159. A. Slepko and A.A. Demkov, "First principles study of Zintl aluminide SrAl2", Phys. Rev. B 85, 195462 (2012).
  160. M. Choi, A. Posadas, R. Dargis, C.-K. Shih, A.A. Demkov, D.H. Triyoso, N.D. Theodore, C. Dubourdieu, J. Bruley, and J. Jordan-Sweet, "Strain relaxation in single crystal SrTiO3 grown on Si (001) by molecular beam epitaxy," J. Appl. Phys. 111, 064112 (2012)
  161. R. Dargis, E. Arkun, A. Clark, R. Roucka, R. Smith, D. Williams, M. Lebby, and A.A. Demkov, “Rare-earth-metal oxide buffer for epitaxial growth of single crystal GeSi and Ge on Si(111)”, J. of Vac. Sci. Technol. B 30, (2012).
  162. A. Slepko and A.A. Demkov, “Band engineering in silicide alloys”, Phys. Rev. B 84, (2012).
  163. A.A. Demkov, H. Seo, X. Zhang,, and J. Ramdani, “Using Zintl-Klemm intermetallics in oxide-semiconductor heteroepitaxy”, Appl. Phys. Lett. 100, 071602 (2012).

    164. 2011:

  164. X. Luo, G. Bersuker, and A.A. Demkov, “Band alignment at the SiO2/HfO2 interface: Group IIIA versus IIIB metal dopants”, Phys. Rev. B 84, 195309 (2011).
  165. A. Slepko, and A.A. Demkov, “First-Principles study of the biomineral hydroxyapatite”, Phys. Rev. B 84, 134108 (2011).
  166. A.A. Demkov, A.B. Posadas, H. Seo and J.K. Lee, “Physics of oxides heterostructures’, ECS Trans. 41, 275 (2011).
  167. J. P. Lewis, P. Jel´ınek, J. Ortega, A.A. Demkov, et al., “Advances and applications in Fireball ab initio tight binding molecular dynamics formalism”, phys. stat. sol. b, 248, 1989  (2011).
  168. A.A. Demkov, A. Posadas, H. Seo, J.K. Lee and N. Sai, “Emerging physics of oxide heterostructures”, phys. stat. sol. b, 248, 2076 (2011).
  169. H. Seo and A. A. Demkov, "First-principles study of polar LaAlO3 (001) surface stabilization by point defects," Phys. Rev. B 84, 045440 (2011).
  170. A. Posadas, M. Berg, H. Seo, D.J. Smith, H. Celio, A.P. Kirk, D. Zhernokletov, R.M. Wallace, A. de Lozanne, and A.A. Demkov, “Strain-induced ferromagnetism in LaCoO3: Theory and growth on Si (100)”, Microel. Eng. 88, 1444 (2011).
  171. A. Posadas, R. Dargis, M. Choi, A. Slepko, J.J. Kim, D.J. Smith, and A.A. Demkov, “Formation of single-orientation epitaxial islands of TiSi2 on Si (001) using Sr passivation”, J. Vac. Sci. Technol. B 23,  1071 (2011).
  172. A. Slepko, A.A. Demkov, W.I. Loh, P. Majhi, and G. Bersuker, “Work function engineering in silicides: chlorine doping in NiSi”, J. of Appl. Phys.  109, 083703 (2011).
  173. A. Posadas, M. Berg, H. Seo, D.J. Smith, H. Celio, A.P. Kirk, D. Zhernokletov, R.M. Wallace, A. de Lozanne, and A.A. Demkov, “Strain-induced ferromagnetism in correlated oxide LaCoO3 epitaxially grown on Si (100)”, Appl. Phys. Lett. 98, 055104 (2011). 

    174. 2010:

  174. J.K Lee, N. Sai, and A.A. Demkov, “Spin-polarized 2DEG through electrostatic doping in LaAlO3-EuO heterostructures”, Phys. Rev. B 82, 235305 (2010).
  175. W. Zhou, S. V. Ushakov, T. Wang, J.G. Ekerdt, A.A. Demkov, and A. Navrotsky, “Hafnia: energetics of thin films and nanoparticles”, J. of Appl. Phys. 107, 123514(2010).
  176. G. Bersuker, C. S. Park, H. C. Wen, K. Choi, O. Sharia, and A.A. Demkov, “Origin of the flat-band voltage roll-off phenomenon in metal/high-k gate stacks”, IEEE Transactions on Electron Devices 57, 2047 (2010).
  177. R. Ehlert, J. Kwon, L. Loumakos, O. Sharia, A.A. Demkov, and M.C. Downer, “Optical second-harmonic and reflectance-anisotropy spectroscopy of clean and hydrogen-terminated vicinal Si(001) surfaces”, J. Opt. Soc. Am. B 27, 981 (2010).
  178. J.K. Lee, Na Sai, T. Cai, Q. Niu and   A.A. Demkov, “Interfacial Magnetoelectric Coupling in Tri-component Superlattices”, Phys. Rev. B 81, 144425 (2010).
  179. A.A. Demkov, X. Luo and O. Sharia, “Theory of HfO2-based high-k dielectric gate stacks”, in Fundamentals of III-B Semiconductor MOSFET’s, S. Oktyabrsky and P. Ye (eds.), p. 51 (Springer 2010).
  180. N. Sergueev and A.A. Demkov, “Resonant inelastic charge transfer in short alanine bridges”, Phys. Rev. B 81, 045112 (2010).

    181. 2009:

  181. T. Cai, Q. Niu, J.K. Lee, Na Sai, and   A.A. Demkov, “Magnetoelectric Coupling and Electric Control of Magnetization in Ferromagnet-Ferroelectric-Metal Superlattices”, Phys. Rev. B 80, 140415(R) (2009).
  182. X. Luo, W. Zhou, S. Ushakov, A. Navrotsky and A.A. Demkov, “Combined theoretical and experimental study of the martensitic phase transition in monoclinic hafnia and zirconia”, Phys. Rev. B 80, 134119 (2009).
  183. X. Luo, O. Sharia, G. Bersuker, and A.A. Demkov, “Hafnia surface and high-k gate stacks”, Materials Research Society Symposium Proceedings, Vol. 1155, p.71 (2009).
  184. H. Bentmann, J, Houser, and A.A. Demkov, "Ab initio study of early stages of III-V epitaxy on high-index surfaces of group-IV semiconductors: In adsorption on Si(112)," Phys. Rev. B 80, 085311 (2009).
  185. A.A. Demkov, O. Sharia, X. Luo, G. Bersuker, and J. Robertson, “Modeling complexity of complex oxides’, Microel. Engineering 86, 1763 (2009).
  186. Na Sai, C.J. Fennie, and A.A. Demkov, “The absence of critical thickness in an ultrathin improper ferroelectric film”, Phys. Rev. Lett. 102, 107601 (2009).
  187. O. Sharia, K. Tse, J. Robertson and A.A. Demkov, “How defects at metal-oxide interfaces modify band alignment”, Phys. Rev. B 79, 125305 (2009).

    188. 2008:

  188. A.A. Demkov, “Density functional theory of high-k dielectric gate stacks”, in Nanoelectronics and Photonics, A. Korkin, and F. Rosei (eds.) p. 171 (Springer, 2008).
  189. X. Luo, A.A. Demkov, D. Triyoso, P. Fejes, R. Gregory and S. Zollner, "Combined experimental and theoretical study of thin hafnia films", Phys. Rev. B 78, 245314 (2008). 
  190. J.K. Lee and A.A. Demkov, "Charge origin and localization at the n-type STO/LAO interface", Phys. Rev. B 78, 193104 (2008).
  191. H. Bentmann, S. Zollner, R. Gregory and A.A. Demkov, "Surface properties of PtSi thin films", Phys. Rev. B 78, 205302 (2008).
  192. X. Zhang and A.A. Demkov, "A theoretical study of Sr-induced reconstructions of the Si (001) surface", J. of Appl. Phys. 103, 103710 (2008).
  193. M. Niranjan, L. Kleinman, and A.A. Demkov, "Theoretical investigation of bonding and Schottky barrier height at the GaAs(001)/NiGe(001) interface: an ab-initio study",  Phys. Rev. B 77, 15316 (2008).
  194. O. Sharia, A.A. Demkov G. Bersuker and B.H. Lee,"On the role of Al doping at the HfO2/SiO2 interface", Phys. Rev. B 77, 085326 (2008).

    195. 2007:

  195. Na Sai, J.K. Lee, C.J. Fennie, and A.A. Demkov, "Spin dependent Schottky barrier at the YMO3/GaN interface", Appl. Phys. Lett. 91, 202910, (2007).
  196. J. Robertson, O. Sharia, and A.A. Demkov, "Fermi level pinning by defects in HfO2-metal gate stacks", Appl. Phys. Lett. 91, 132912 (2007).
  197. A.A. Demkov, O. Sharia, and J.K. Lee, "Theoretical analysis of high-k dielectric gate stacks", Microelectronics Engineering 84, 2032 (2007).
  198. N. Sergueev, A.A. Demkov, and H. Guo, "Probing molecular vibrations with inelastic resonant tunneling", Phys. Rev. B. 75, 233418 (2007).
  199. M. Niranjan, L. Kleinman, and A.A. Demkov, "Theoretical investigation of PtGe and NiGe", Phys. Rev. B. 75, 085326 (2007).
  200. A.A. Demkov and J. Lee, "Theoretical Investigation of the Band alignment at the LaAlO3/SrTiO3 interface," MRS Symposium Proceedings 966, 0966-T07-33 (2007).
  201. M. Niranjan, L. Kleinman, and A.A. Demkov, "Theoretical investigation of Pt monosilicide and several germanides: electronic structure, surface energetics, and work functions", MRS Symposium Proceedings 980, 0980-II05-43 (2007).
  202. S. Zollner, J.P. Liu, P. Zaumseil, H.J. Osten and A.A. Demkov, "Dielectric functions, elasto-optical effects, and critical-point parameters for biaxially stressed Si1-yCy alloys on Si (001)",  Semiconductor Sci. and Technol. 22, S13 (2007).
  203. O. Sharia, A.A. Demkov, G. Bersuker, and B.H. Lee, "Theoretical study of the insulator/insulator interface: band alignment at the SiO2/HfO2 junction", Phys. Rev. B. 75, 035306 (2007).
  204. A.A. Demkov, O. Sharia, X. Luo, and J. k. Lee, "Density functional theory of high-k dielectric gate stacks", (invited), Microelectronics Reliability 47, 686 (2007).

    205. 2006:

  205. C.M. Osburn, S.A. Campbell, A.A. Demkov, E. Eisenbraun, E. Garfunkel,  T. Gustafsson,  A.I. Kingon, J. Lee, D.J. Lichtenwalner, G. Lucovsky,  T.P. Ma,  J.P. Maria, V. Misra, R.J. Nemanich, G.N. Parsons, D.G. Schlom, S. Stemmer, R.M. Wallace, and J. Whitten, "Materials and Processes for High k Gate Stacks: Results from the FEP Transition Center", (invited) ECS Transactions 3, 389 (2006).
  206. A.A. Demkov, "Thermodynamic stability and band alignment at a metal high-k dielectric interface", Phys. Rev. B 74, 085310 (2006).
  207. M. Niranjan, S. Zollner, L. Kleinman, and A.A. Demkov, "Theoretical investigation of PtSi surface energies and work functions" Phys. Rev. B 73, 195332 (2006).

    208. 2005:

  208. Y. Liang and A. A. Demkov, "Epitaxial Oxide/.Semiconductor Systems" in "Materials Fundamentals of Gate Dielectrics", A. A. Demkov and A. Navrotsky Eds.  (Springer, 2005).
  209. E. Chagarov, A.A. Demkov, and J. Adams, "Ab-initio calculations of surface phase diagrams of silica polymorphs," Phys. Rev. B 71, 195306 (2005).
  210. S. V. Ushakov, A. Navrotsky, Y. Yang, S. Stemmer, K. Kukli, M. Ritala, M. A. Leskelä, P. Fejes, A.A. Demkov, C. Wang, B.-Y. Nguyen, D. Triyoso, and P. Tobin, "Crystallization in hafnia- and zirconia-based systems", phys. stat. sol. (b), 241, 2268 (2004).
  211. A.A. Demkov, L. Fonseca, J. Tomfohr, and O.F. Sankey, "Complex band structure and the band alignment problem at the Si-high-k dielectric interface", Phys. Rev. B 71, 195306 (2005).

    212. 2004:

  212. A.A. Demkov, L. Fonseca, J. Tomfohr, and O.F. Sankey, "A band alignment problem at the Si-high-k dielectric interface", Mater. Res. Soc. Proceedings, Vol.786, 29 (2004).
  213. R. Droopad, K. Eisenbeiser, and A. A. Demkov, "High-K Crystalline Gate Dielectrics – An IC Manufacturer's Perspective" in "Alternative Gate Dielectrics", H. Huff and D. Gilmer Eds.  (Springer, 2004).

    214. 2003:

  214. S. B. Samavedam, L. B. La, P. J. Tobin, B. White, C. Hobbs, L. R. C. Fonseca, A. A. Demkov, et al.,"Fermi Level Pinning with Sub-monolayer MeOx and Metal Gates", IEEE International Electron Devices Meeting 2003 p.13.1.1 (2003).
  215. J. Sexton, S.I. Yi, M. Hale, P. Kruse, A.A. Demkov, and A. Kummel, "Displacement of Surface Arsenic Atoms by Insertion of Oxygen Atoms into As-Ga Backbonds", J. of Chem. Phys. 119, 9191 (2003).
  216. L. Fonseca, A. Korkin, A.A. Demkov, X. Zhang, and A. Knizhnik, "Atomistic calculation of leakage current through ultra-thin metal-oxide barriers", Microelectronic Eng. 69, 130 (2003).
  217. L. Fonseca, A.A. Demkov, and A. Knizhnik, "Difficulties of the microscopic theory of leakage current through ultra-thin oxide barriers: point defects", phys. stat. sol. (b) 239, 48 (2003).
  218. S.V. Ushakov, C.E. Brown, A. Navrotsky, A.A. Demkov, C. Wang, and B.-Y. Nguyen,"Thermal analyses of bulk amorphous oxides and silicates of zirconium and hafnium." Materials Research Society Symposium Proceedings, 745 p. 3-8 (2003).
  219. L. Fonseca, and A.A. Demkov, "Convergence issues in ab-initio transport calculations through oxide barriers and molecules", Proceedings of the 2003 International Conference on Computational Nanoscience, ICCN 20 vol.2 , p.86-9, M. Laudon and B. Romanowicz, Eds., (Computational Publications, 2003).
  220. L. Hilt Tisinger, R. Liu, J. Kulik, X. Zhang, J. Ramdani, and A.A. Demkov, "Raman Studies of SrTiO3 Thin Films on Si", Journal of Vacuum Science and Technol. B 21, 53 (2003).
  221. X. Zhang, A.A. Demkov, H. Li, X. Hu, Y. Wei, and J. Kulik, "The atomic and electronic structure of the Si /SrTiO3 interface", Phys. Rev. B 68, 125323 (2003).
  222. R. Droopad, Z. Yu, Hao Li, Y. Liang, C. Overgaard, A.A. Demkov, X. Zhang, K. Moore, K. Eisenbeiser, Hu, J. Curless, and J. Finder,"Development of Integrated Heterostructures on Silicon by MBE", Journal of Crystal Growth, 251, 638 (2003).
  223. X. Hu et al., "The interface of epitaxial SrTiO3 on silicon: in-situ and ex-situ studies", Appl. Phys. Lett. 82, 203 (2003).
  224. H.Li, X. Hu, Y. Wei, Z. Yu, X. Zhang, R. Droopad, A.A. Demkov, J. Edwards, K. Moore, and W. Ooms, "Two dimensional growth of high quality SrTiO3 thin films on Si", J. of Appl. Phys. 93,4521(2003).

    225. 2002:

  225. S. Gonzalez, D. Vasileska, and A. A. Demkov, "Empirical pseudopotential method for the band structure calculation of strained silicon germanium materials", Journal of Computational Electronics 1, 179 (2002).
  226. X. Zhang, L. Fonseca, and A.A. Demkov, "The application of density functional, local orbitals, and scattering theory to quantum transport", phys. stat. sol. (b) 233, 70 (2002).
  227. X. Zhang, L. Fonseca, and A.A. Demkov, "First –principles study of electron transport through atomistic metal-oxide-semiconductor structures", in Proceedings of the 2002 International Conference on Computational Nanoscience, ICCN 2002, M. Laudon and B. Romanowicz, Eds. p. 322, (Computational Publications, 2002).
  228. R. Liu et al., "Materials and physical properties of novel high-k and medium-k gate dielectrics", Materials Research Society Proceedings 670, p. K.1.1.1 (2002).
  229. Yi Wei, X. Hu, Y. Liang, D. Jordan, B. Craigo, R. Droopad, Z. Yu, A. Demkov, J. Edwards Jr., and W. Ooms, "Mechanism of cleaning Si (001) surface using Sr or SrO for the growth of crystalline SrTiO3 films", Journal of Vacuum Science and Technol. B 20, 1402 (2002).
  230. Yi Wei, X. Hu, Y. Liang, D. Jordan, B. Craigo, R. Droopad, Z. Yu, A. Demkov, J. Edwards Jr., and W. Ooms, "Si (001) surface cleaning using Sr or SrO", Materials Research Society Proceedings 716, B3.4.1  (2002).
  231. X. Zhang and A.A. Demkov, "Steps on the (001) SrTiO3 surface", Journal of Vacuum Science and Technol. B 20, 1664 (2002).
  232. W. Windl, A.A. Demkov, and O.F. Sankey, "Theory of strain and electronic structure of Si1-yCy and Si1-x-yGexCy alloys¡±"in  "Silicon-Germanium Carbon Alloys¡±, S. Pantelides and S. Zollner Eds.  p. 237 (Taylor&Francis, 2002).

    233. 2001:

  233. A.A. Demkov and O.F. Sankey, "Theory of zeolite supralattices: Se in zeolite LTA", Journal of Physics, Condensed Matter 13, 10433 (2001).
  234. A.A. Demkov, X. Zhang and D.A. Drabold, "Towards a first-principles simulation and current-voltage characteristic of atomistic metal-oxide-semiconductor structures", Phys. Rev. B 64, 125306-1 (2001).
  235. J.P. Lewis, K.R. Glaesemann, G.A. Voth, J. Fritsch, A.A. Demkov, J. Ortega, and O.F. Sankey, "Further developments in the local-orbital density-functional-theory tight-binding method", Phys. Rev. B 64, 195103  (2001).
  236. A.A. Demkov, "Investigating Alternative Gate Dielectrics: A Theoretical Approach", phys. stat. sol. (b) 226, 57 (2001).
  237. A.A. Demkov and X. Zhang, "Theoretical investigation of gate dielectrics", Proceedings of the IEEE 27th International Symposium on Compound Semiconductors, 155 (2001).
  238. M. Mollat, A.A. Demkov, and P.L. Fejes, "Stable titanium silicide formation on field oxide after BF2 ion implantation", Journal of Vacuum Science and Technology B 19, 372 (2001).
  239. A.A. Demkov, X. Zhang, H. Loechelt, "Theoretical investigation of ultrathin gate dielectrics", VLSI Design 13, 135 (2001).

    240. 2000:

  240. N. Tanpipat, J. Andzelm, B. Delley, A.A. Korkin, and A.A. Demkov, "Atomistic Modeling of Chemical Vapor Deposition: NO on the Si (001) (2x1) reconstructed surface", The Electrochemical Society, Proceedings Volume 2000-13.
  241. A.A. Demkov, R. Liu, S. Zollner, M. Kottke, D. Werho, et al., "Theoretical and experimental analysis of the low dielectric constant of fluorinated silica", Materials Research Society Proceedings 612,  (2000).
  242. S. Zollner, A.A. Demkov, R. Liu, P.L.  Fejes, R.B. Gregory, P. Alluri, J. A. Curless, Z. Yu, J. Ramdani, R. Droopad, T.E. Tiwald, J.N. Hilfiker, and J.A. Woollam, "Optical properties of bulk and thin-film SrTiO3 on Si and Pt", Journal of Vacuum Science and Technology B 18,2242 (2000).
  243. A.A. Demkov, et al., "Theoretical and experimental analysis of the low dielectric constant of fluorinated silica", Mater. Res. Soc. Proceedings 579, 255 (2000).
  244. Korkin, A.A. Demkov, N. Tanpipat, and J. Andzelm,"Theoretical investigation of the initial reaction of the NO decomposition on the Si (100) (2x1) reconstructed surface", Journal of Chemical Physics 113, 8237 (2000).
  245. A.A. Demkov and R. Liu, "Theoretical and experimental investigation of ultrathin oxynitride", Mat. Res. Soc. Proceedings 592, 257 (2000).
  246. A.A. Demkov, R. Liu, X. Zhang, and H. Loechelt, "Theoretical and experimental investigation of ultra-thin oxynitrides and the role of nitrogen at the Si-SiO2 interface", Journal of Vacuum Science and Technology B 18, 2388 (2000).

    247. 1999:

  247. Korkin, A.A.  Demkov, N. Tanpipat, and J. Andzelm,"Atomistic Modeling of Chemical Vapor Deposition: Silicon Oxynitride", MSI, Inc. Webpage http://www.msi.com/materials/cases/SiNO.html. (1999).
  248. M. Fuentes-Cabrera, et al.,"Theoretical study of graphitic analogs of simple semiconductors", Modeling and Sim. in Materials Science and Eng. 7, 929 (1999).
  249. A.A. Demkov and O.F. Sankey, "Growth study and theoretical investigation of the ultra-thin oxide SiO2-Si heterojunction", Phys. Rev. Lett. 83, 2038 (1999).
  250. J. Dong, O.F. Sankey, A.A. Demkov, G. Ramachandran, J. Gryko, P. McMillan, and W. Windl, "Theoretical calculations of the vibrational modes in Ge46 clathrate and related MxGayGe46-y type clathrates", p. 443 (Materials Research Society Vol. 545, 1999).

    251. 1998:

  251. W. Windl and A.A. Demkov, "First-Principles Study of N Impurities in SiC Polytype", in "Defect and Impurity Engineered Semiconductors II", S. Ashok, J. Chevallier, K. Sumino, B.L. Sopori, and W. Gotz, p. 181 (Materials Research Society Vol. 510, 1998).
  252. O.F. Sankey, A.A. Demkov, and T. Lenosky, "Electronic Structure of Black Sodalite", Phys. Rev. B 57, 15129 (1998).
  253. A.A. Demkov, O.F. Sankey, and M. Fuentes, "Structural band gap engineering", in "Materials and Devices of Silicon-Based Optoelectronics", J.E. Cunningham, S. Coffa, Polman and R. Soref, p. 355 (Materials Research Society Vol. 486, 1998).
  254. A.A. Demkov and O.F. Sankey, "Theoretical investigation of supralattices: selenium clusters in zeolites", Microporous and Mesoporous Mater. 21, 347 (1998).
  255. O.F. Sankey, A.A. Demkov, W. Windl, J.H. Fritsch, J.P. Lewis, and M. Fuentes-Cabrera, "On the application of approximate density functionals to complex systems", Int. J. of Quantum Chem. 69, 327 (1998).
  256. J. Gryko, P.F. McMillan, R.F. Marzke, A.A. Demkov, and O.F. Sankey, "Temperature and Larmor frequency dependence of 23Na NMR shifts in silicon clathrates", Phys. Rev. B 57, 4172 (1998).  

    257. 1997:

  257. A.A. Demkov, and O.F. Sankey, "Supralattices: another dimension in materials science - theoretical investigation", in "Studies in Surface Science and Catalysis", H.C. Chon and Y.S. Uh Eds., p. 2259 (Elsevier, Amsterdam, 1997).
  258. A.A. Demkov, O.F. Sankey, J. Gryko, and P.F. McMillan, ¡°Theoretical Predictions of Expanded-Volume Phases of GaAs'', Phys. Rev. B 55, 6904 (1997)
  259. A.A. Demkov, and O.F. Sankey, "Model simulations of Supralattices: semiconductor Si clusters in Zeolites'', Phys. Rev. B 56, 10497 (1997).

    260. 1996:

  260. A.A. Demkov, and O.F. Sankey, "Recent developments in the theory of supralattices" (review), Chem. Mater. 8, 1793 (1996).
  261. A.A. Demkov, and O.F. Sankey, "Clusters stuffed inside frameworks: electronic structure theory", J. Computer Aided Materials Design 3, 128 (1996).
  262. A.A. Demkov, W. Windl and O.F. Sankey, "Expanded-Volume Phases of Silicon: Zeolites without Oxygen", Phys. Rev. B 53, 11288 (1996).
  263. A.A. Demkov, and O.F. Sankey, "Electronic structure theory for zeolites" (invited review), in  "Access in Nanoporous Materials",T.J. Pinnavaia and M.F. Thorpe Eds., p. 27 (Plenum Press, New York, 1995).

    264. 1995:

  264. A.A. Demkov, J. Ortega, M.P. Grumbach, and O.F. Sankey, "Electronic structure approach for complex silicas", Phys. Rev. B 52, 1618 (1995).
  265. A.A. Demkov, O.F. Sankey, S. Daftuar, and J. Gryko, "Wide band gap Si by bending bonds in four-coordinated clathrate structures", Proceedings of ICPS-22, Vancouver, Canada, D.J. Lockwood ed., p. 2205, (World Scientific, New Jersey, 1995).

    266. 1994:

  266. A.A. Demkov, O.F. Sankey, K.E. Schmidt, G.B. Adams, and M. O'Keeffe, "Theoretical investigation of alkali-metal doping in Si clathrates", Phys. Rev. B 50, 17001 (1994).
  267. J. Ortega, A.A. Demkov, and O.F. Sankey, "Chemisorption of In and Al on GaAs (110)", J. Appl. Phys. 76, 2918 (1994).
  268. G.B. Adams, M. O'Keeffe, A.A. Demkov, O.F. Sankey, and Y. Huang, "Wide-band-gap Si in open fourfold-coordinated clathrate structure", Phys. Rev. B 49, 8048 (1994).

    269. 1993:

  269. O.F. Sankey, A.A. Demkov, W.T. Petuskey, and P.F. McMillan, "Energetics and electronic structure of the hypothetical zinc blende form of GeC", Modeling Simul. Mater. Sci.Eng.  1, 741 (1993).
  270. A.A. Demkov, and O.F. Sankey, "Theoretical investigation of random Si-C alloys", Phys. Rev. B 48, 2207 (1993).