Electronic Materials

Investigators: Banerjee, Chelikowsky, de Lozanne, Demkov, Ekerdt, Hwang, Lee, Li, Register, Shi, Shih, Yu.

The aggressive scaling down in the Si-based CMOS devices has presented critical challenges that need to be tackled in order to sustain Moore's law which has set the trend of the whole microelectronics industry over the past half century.
Two critical areas that have been clearly identified by the International Technology Roadmap for Semiconductors (ITRS) are a focus of this IGERT program: (a) precise control of dopant concentration and electrical junction location with nanometer precision; and (b) precise control of interfacial properties of high-K dielectric/Si interfaces. The University of Texas has nurtured the world leading experts in ultra-shallow junction formation (Banerjee) and high-k dielectrics (Lee). To address this critical problem this IGERT program integrates expertise in device applications with atomic scale characterizations and materials theory.  More specificly this synergy involves device fabrication (Banerjee and Lee), atomic and nanoscale imaging and electronic structure profiling (Shih, deLozanne, Li, Shi and Yu), materials theory and process simulation (Demkov, Chelikowsky, Banerjee, Hwang and Register), as well as device simulation and device characterization (Register, Banerjee, Yu and Li).