Nano Electronic Materials Research Group
Introduction to XSTM
Most of modern Semiconductor devices are fabricated epitaxially by the MBE or MOCVD. In order to understand the material structure and electronic property of buried layers, a cross-sectional surface must be produced and studied by STM. (See the figure)
Schematic of XSTM
- Schematic shows the procedures of XSTM. Samples are cleaved in-situ and scanned for epilayers.Identifying (110) and (110) by selective imaging of Ga and As sublattices
- (110) and (110) surfaces are not equivalent. XSTM can identify the surfaces.Ability to resolve each chemical species for InGaAs
- In and Ga are at different energy levels. They show up with different contrasts in the STM image- So XSTM, cross-sectional scanning tunneling microscopy, provides a powerful tool to explore the material structure and electronic property of modern devices
Nano Electronic Material Research Group
