NEMRG

  1. “Coherently controlled quantum emitters in cavities,” Muller A, Flagg EB, Deppe DG, Salamo GJ, Shih CK, ADVANCES IN PHOTONICS OF QUANTUM COMPUTING, MEMORY, AND COMMUNICATION III   Book Series: Proceedings of SPIE-The International Society for Optical Engineering    Volume: 7611    Pages: -    Published: 2010 

  2. “Quantum Size Effects on Work Function of Metallic Nanostructures,” Jungdae Kim, Shengyong Qin, Wang Yao, Qian Niu, M. Y. Chou, and Chih-Kang Shih, Proc. Natl. Acad. Sci. vol 107, page 12761, (2010).

  3. “Experimental Evidence of Single-Phonon Mediated Inter-Level Excitonic Transitions in a Semiconductor Quantum Dot,” Flagg EB, Robertson JW, Founta S, Ma WQ, Xiao M, Salamo GJ, Shih CK, 2009 Conference on Lasers and Electro-optics and Quantum Electronics and Laser Science Conference (CLEO/QELS 2009), VOLS 1-5, Pages: 2092-2093  (2009)  

  4. “Visualizing quantum well state perturbations of metallic thin films near stacking fault defects,” by Alexander A. Khajetoorians, Gregory A. Fiete, and Chih-Kang Shih, PHYSICAL REVIEW B 81, 041413 (R) (2010)..

  5. “Adsorbate-induced restructuring of Pb nanomesas grown on vicinal Si(111) in the quantum regime,” Alexander Ako Khajetoorians, Wenguang Zhu, Jisun Kim, Shengyong Qin, Holger Eisele, Zhenyu Zhang, and Chih-Kang Shih, PHYSICAL REVIEW B 80, 245426 (2009).

  6. “Propagating Surface Plasmon Induced Photon Emission from Quantum Dots,” Hong Wei, Daniel Ratchford, Xiaoqin (Elaine) Li, Hongxing Xu, and Chih-Kang Shih, Nano Letters, 9, 4168 (2009).

  7. “Luminescent properties of ensemble and individual erbium-doped yttrium oxide nanotubes,” Mao YB, Guo X, Tran T, et al., JOURNAL OF APPLIED PHYSICS   Volume: 105   Issue: 9 Article Number: 094329   Published: MAY 1 2009 

  8. “Superconductivity at the Two-dimensional Limit,” Shengyong Qin, Jungdae Kim, Qian Niu and Chih-Kang Shih, Science 324, 1314 (2009).

  9. Luminescence of Nanocrystalline Erbium-Doped Yttria” Mao YB, Tran T, Guo X, et al., Source: ADVANCED FUNCTIONAL MATERIALS Volume: 19 Issue: 5 Pages: 748-754 Published: MAR 10 2009

  10. Resonantly driven coherent oscillations in a solid-state quantum emitter,” Flagg EB, Muller A, Robertson JW, et al. Source: NATURE PHYSICS Volume: 5 Issue: 3 Pages: 203-207 Published: MAR 2009

  11. Direct Evidence of Interlevel Exciton Transitions Mediated by Single Phonons in a Semiconductor Quantum Dot Using Resonance Fluorescence Spectroscopy,” Flagg EB, Robertson JW, Founta S, et al. Source: PHYSICAL REVIEW LETTERS Volume: 102 Issue: 9 Article Number: 097402 Published: MAR 6 2009

  12. Energy Transfer within Ultralow Density Twin InAs Quantum Dots Grown by Droplet Epitaxy” Liang BL, Wang ZM, Wang XY, et al. Source: ACS NANO Volume: 2 Issue: 11 Pages: 2219-2224 Published: NOV 2008

  13. VLS growth of Si nanocones using Ga and Al catalysts”, Bae J, Kulkarni NN, Zhou JP, et al. Source: JOURNAL OF CRYSTAL GROWTH Volume: 310 Issue: 20 Pages: 4407-4411 Published: OCT 1 2008

  14. “Pattern formation of nanoflowers during the vapor- liquid- solid growth of silicon nanowires”, Bae J, Thompson-Flagg R, Ekerdt JG, et al. Source: PHYSICA B-CONDENSED MATTER Volume: 403 Issue: 19-20 Pages: 3514-3518 Published: OCT 1 2008

  15. Comment on "Coherent control of a V-type three-level system in a single quantum dot'' – Reply, Cheng MT (Cheng, M. T.), Bianucci P (Bianucci, P.), Muller A (Muller, A.), Zhou HJ (Zhou, H. J.), Wang QQ (Wang, Q. Q.), and Shih CK (Shih C.K.), Phys. Rev. Lett. vol. 101, 049702 (2008)

  16. “Observation of simultaneous fast and slow light,” Bianucci P, Fietz CR, Robertson JW, et al. PHYSICAL REVIEW A Volume: 77 Issue: 5 Article Number: 053816 (2008)

  17. “Adsorbate-induced restructuring of Pb nanomesas grown on vicinal Si(111) in the quantum regime,” Alexander Khajetoorians, Wenguang Zhu, Shengyong Qin, Holger Eisele, Zhenyu Zhang, and Chih-Kang Shih, Phys Rev Lett (submitted May 2008)

  18. “VLS growth of Si nanocones using Ga and Al catalysts,” J. Bae, N. Kulkarni, J.P. Zhou, J.G. Ekerdt, and C.K. Shih, Journal of Crystal Growth 310 (2008), pp. 4407-4411

  19. “Pattern formation of nanoflowers during the vapor-liquid-solid growth of silicon nanowires,” J. Bae, N. Kulkarni, B. Thompson, J. Ekerdt, and C.K. Shih, Physica B 403, pp 3514-3518 (2008).

  20. "Structural Characterization and Temperature-Dependent Photoluminescence of Linear CdTe/CdSe/CdTe Heterostructure Nanorods" by Aaron E. Saunders, Bonil Koo, Xiaoyong Wang, C. K. Shih, B. A. Korgel, ChemPhysChem, vol 9, 1158 (2008).

  21. “Resonant Fluorescence from a Coherently Driven Semiconductor Quantum Dot in a Cavity,” A. Muller, E. B. Flagg, P. Bianucci, X.Y. Wang, D. G. Deppe, W. Ma, J. Zhang, G. J. Salamo, M. Xiao, and C. K. Shih, Phys. Rev. Lett. 99, 187402 (2007).

  22. “Single dot spectroscopy of site-controlled InAs quantum dots nucleated on GaAs nanopyramids,” T. Tran T, A. Muller, C.K. Shih, P.S. Wong PS, G. Balakrishnan, N. Nuntawong, J. Tatebayashi, D.L. Huffaker, APPLIED PHYSICS LETTERS 91 (13): Art. No. 133104 SEP 24 2007

  23. Pablo Bianucci, Chris R. Fietz, John W. Robertson, Gennady Shvets and Chih-Kang Shih, "Polarization conversion in a silica microsphere", Optics Express 15, 6999--7004 (2007)

  24. Pablo Bianucci, Chris R. Fietz, John W. Robertson, Gennady Shvets and Chih-Kang Shih, "Whispering gallery resonators as polarization converters", Optics Letters 32, 2224-2226 (2007)

  25. Khajetoorians AA, Li J, Shih CK, Wang XD, Garcia-Gutierrez D, Jose-Yacaman M, Pham D, Celio H, Diebold A, “Dopant characterization of fin field-effect transistor structures using scanning capacitance microscopy,” JOURNAL OF APPLIED PHYSICS 101 (3): Art. No. 034505 FEB 1 2007

  26. “Self-aligned all-epitaxial microcavity for cavity QED with quantum dots,” A. Muller, D. Lu, J. Ahn, D. Gazula, S. Quadery, D.G. Deppe, and C.K. Shih, Nano Letters 6 (12): 2920-2924 DEC 13 2006.

  27. “Scanning Tunneling Spectroscopy of Ag films: The Effect of Periodic vs. Quasiperiodic Modulation,” Daejin Eom, C.–S. Jiang, H.-B. Yu, J. Shi, Q. Niu, Ph. Ebert, and C.–K. Shih, Phys Rev Lett 97, 206102 (2006)

  28. “Internal and external polarization memory loss in single quantum dots,” Wang,Q.Q., Muller,A., Cheng,M.T., Zhou,H.J., Bianucci,P., Shih,C.K. Appl. Phys. Lett. 89, 142112 (2006)

  29. “Enhanced dipole-dipole interaction of CdSe/CdS nanocrystal quantum dots inside a planar microcavity” Xiaoyong Wang, Chih-Kang Shih, Jianfeng Xu and Min Xiao, Appl. Phys. Lett. 89, 113114 (2006).

  30. “Direct spectroscopic evidences for the formation of one-dimensional wetting wires during the growth of InGaAs/GaAs quantum dot chains,” Xiaoyong Wang, Zhiming Wang, Gregory J. Salamo, and Chih-Kang Shih, Nano Letters 6, 1847 (2006).

  31. “Nanoparticles of Er-doped glass produced by laser ablation of microparticles,” Keto JW, Becker ME, Kovar D, Malyavanatham G, Muller A, O'Brien DT, Shih CK, Wang J; JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS 23 (8): 1581-1585 AUG 2006

  32. Atomic force microscopy study of sapphire surfaces annealed with a H2O flux from a baffled molecular-beam epitaxy effusion cell loaded with Al(OH)3, Oye MM, Hurst JB, Shahrjerdi D, Kulkarni NN, Muller A, Beck AL, Sidhu R, Shih CK, Banerjee SK, Campbell JC, Holmes AL, Mattord TJ, Reifsnider JM, J. Vac. Sci. Technol B. 24, 1572 (2006).

  33. “Time-Resolved Spectroscopy of Individual Impurity Centers in ZnSe” A. Muller, P. Bianucci, C. Piermarocchi, M. Fornari, I. C. Robin, R. André, and C. K. Shih, Phys. Rev. B 73, 081306(R) (2006)

  34. “Study of Two-Dimensional B Doping Profile in Si FinFET Structures by High Angle Annular Dark Field,” D.I. Garcia-Gutierrez, M. Jose-Yacaman, A. A. Khajetoorians, C.K. Shih, X.-D. Wang, D. Pham, H. Celio, A. Diebold, J. Vac. Sci. Technol B. 24, 730 (2006)

  35. “Photoluminescence Intermittency of InGaAs/GaAs Quantum Dots Confined in a Planar Microcavity,” X. Y. Wang, C. K. Shih, W. Q. Ma, J. Y. Zhang, G. J. Salamo, and Min Xiao, Nano Letters vol 5, 1873 (2005).

  36. “Persistent superconductivity in ultra-thin Pb films: A scanning tunneling spectroscopy study,” Daejin Eom, S. Qin, M.-Y. Chou, and C.K. Shih, Phys. Rev. Lett. 96, 027005 (2006).

  37. “High Q (33 000) all-epitaxial microcavity for quantum dot vertical-cavity surface-emitting lasers and quantum light sources,” Andreas Muller, Chih-Kang Shih, Jaemin Ahn, Dingyuan Lu, Deepa Gazula, and Dennis G. Deppe, Appl. Phys. Lett 88, 031107 (2006).

  38. “Isolated single quantum dot emitters in all-epitaxial micro-cavities,” A. Muller, C.K. Shih, J. Ahn, D. Lu, and D. Deppe, Opt. Lett. 31, 528 (2006).

  39. “Cell motility and local viscoelasticity of fibroblasts,” Park S, Koch D, Cardenas R, Kas J, Shih CK, BIOPHYSICAL JOURNAL 89 (6): 4330-4342 DEC 2005.

  40. “Coherent control of a V-type three-level system in a single quantum dot,” Q. Q. Wang, A. Muller, M. T. Cheng, H. J. Zhou, P. Bianucci, and C. K. Shih, Phys. Rev. Lett. 95, 187404 (2005).

  41. “Low Threshold Field Emission from Cesiated Silicon Nanowires,” N. N. Kulkarni, J. Bae, C.K. Shih, S. Stanley, S. Coffee and J. Ekerdt, Appl. Phys. Lett. 87 (21): Art. No. 213115 NOV 21 2005.

  42. “Three-dimensional Modeling of Nanoscale Seebeck Measurements by Scanning Thermoelectric Microscopy,” Zhixi Bian, Ali Shakouri, Li Shi, Ho-Ki Lyeo, and C. K. Shih, Appl. Phys. Lett. 87, 053115 (2005).

  43. “Quality factors of qubit rotations in single semiconductor quantum dots,” Q. Q. Wang, A. Muller, P. Bianucci, C. K. Shih, and Q.K. Xue, Appl. Phys. Lett. 87, 031904 (2005).

  44. “Decoherence processes during optical manipulation of excitonic qubits in semiconductor quantum dots,” Q. Q. Wang, A. Muller, P. Bianucci, E. Rossi, Q. K. Xue, T. Takagahara, C. Piermarocchi, A. H. MacDonald, and C. K. Shih, Phys. Rev. B 72, 035306 (2005).

  45. “Quantum Growth of Magnetic Nanoplatelets of Co on Si with High Blocking Temperature,” M-H Pan, H. Liu, J-Z Wang, J-F Jia, Q-K Xue, J-L Li, S. Qin, U. M. Mirsaidov, X-R Wang, J. T. Markert, Z. Zhang, and C. K. Shih, Nano letters Vol. 5, No. 1, 87-90 (2005).

  46. “Spatial correlation-anticorrelation in strain-driven self-assembled InGaAs quantum dots,” X.-D. Wang, N. Liu, C. K. Shih, S. Govindaraju, and A. L. Holmes, Jr., Appl. Phys. Lett. 85, 1356 (2004).

  47. “Experimental realization of the one qubit Deutsch-Jozsa algorithm in a quantum dot,” P. Bianucci, A. Muller, Q. Q. Wang, Q.-K. Xue, C. Piermarocchi, and C. K. Shih, Phys. Rev. B 69,161303(R), 2004.

  48. Wan Young Jang, N.N.Kulkarni, C.K. Shih and Zhen Yao, “Electrical characterization of individual carbon nanotubes grown in nanoporous anodic alumina templates”, Appl. Phys. Lett. 84, 1177, (2004).

  49. C.–S. Jiang, S.–C. Li, H.–B. Yu, D. Eom, X. –D. Wang, P. Ebert, J.–F. Jia, Q.–K. Xue, and C.K. Shih, “Building Pb nano-mesas with atomic layer precision,” Phys. Rev. Lett. 92, 106104 (2004)

  50. Ho-Ki Lyeo, A.A. Khajetoorians, Li Shi, Kevin Pipe, Rajeev J. Ram, Ali Shakouri, and C.K. Shih, “Mapping Thermoelectric Power of Semiconductor Junctions with Nanometer Resolution,” Science 303, 186 (2004).

  51. R. E. Mahaffy, S. Park, E. Gerde, F. Mackintosh, J. Käs, and C. K. Shih “Quantitative analysis of the viscoelastic properties in thin regions of fibroblasts using AFM,” Biophysical Journal 86:1777-1793 (2004)

  52. D. Kulik, H. Htoon, and C. K. Shih, Yadong Li “Photoluminescence properties of single CdS nanorods,” J. Appl. Phys. 95, 1056 (2004)

  53. Muller, Q. Q. Wang, P. Bianucci, C. K. Shih, and Q. K. Xue, "Determination of Anisotropic Dipole Moments ..." Appl. Phys. Lett. 84, 981 (2004).

  54. H. Htoon and C. K. Shih, “Ultrafast Coherent Dynamics in Semiconductor Quantum Dots.” TOPICS IN APPLIED PHYSICS 92: 99-137 (2004) “Ultrafast Dynamical Processes in Semiconductors” edited by K. T. Tsen. (Springer-Verlag, Heidelberg, 2004).

  55. “Quantum coherence phenomena in semiconductor quantum dots: quantum interference, decoherence and Rabi oscillation,” H. Htoon, C. K. Shih and T. Takagahara, in Chao, Solitons, and Fractals, vol. 16, page 439, (2003).

  56. “Effect of the Si substrate structure on the growth of two-dimensional thin Ag-films,” C.-S. Jiang, Hongbin Yu, C.-K. Shih, Ph. Ebert, Surface Science. 518, 63 (2002).

  57. “Probing the step structure of buried metal/semiconductor interfaces using quantized electron states: The case of Pb on Si(111) 6x6-Au,” H.-B.Yu, C.-S. Jiang, P. Ebert, C.-K. Shih, Appl. Phys. Lett. 81, 2005 (2002).

  58. “Cross-sectional scanning tunneling microscopy study of InGaAs quantum dots on GaAs(001) grown by heterogeneous droplet epitaxy,” N. Liu, H.-K. Lyeo, C.-K. Shih, M. Oshima, T. Mano, N. Koguchi, Appl. Phys. Lett. 80, 4345 (2002).

  59. “Interplay of Rabi oscillations and quantum interference in semiconductor quantum dots,” H. Htoon, T. Takagahara, D. Kulik, O. Baklenov, A.L. Holmes Jr., and C.K. Shih, Phys. Rev. Lett. 88, 087401 (2002)

  60. “Quantitative Determination of the Metastability of Flat Ag Overlayers on GaAs(110),” Hongbin Yu, C. S. Jiang, Ph. Ebert, X. D. Wang, J. M. White, Qian Niu, Zhenyu Zhang, and C. K. Shih, Phys. Rev. Lett. 88, 016102 (2002).

  61. “Scanning tunneling spectroscopy of quantum well and surface states of thin Ag films grown on GaAs(110),” Jiang CS, Yu HB, Wang XD, Shih CK, Ebert P, Phys. Rev. B 64, 235410 (2001).

  62. “Temperature-Dependent Electron Transport through Silver Nanocrystal Superlattices,” R. Christopher Doty, Hongbin Yu, C. Ken Shih, Brian A. Korgel, J. Phys. Chem. B 105, 8291 (2001).

  63. “Carrier relaxation and quantum decoherence of excited states in self-assembled quantum dots,” H. Htoon, D. Kulik, O. Baklenov, A.L. Holmes Jr., T. Takagahara, C.K. Shih, Phys. Rev. B 63, 241303, (2001).

  64. “Viscoelastic and active response of neuronal growth cones to mechanical stimuli by AFM,” Lakadamyali M, Mahaffy R, Furnish B, Bayer J, Mackintosh F, Shih CK, Schmidt C, Kas J, Biophys. J.(Annual Meeting Abstracts) (2001).

  65. “Scanning tunneling microscopy of defects in quasiperiodically ordered surfaces,” Ebert Ph, Chao KJ, Niu Q, Shih CK, Plummer EW, Urban K, Mat. Sci. Eng. A 294, 826 (2000).

  66. “Scanning probe-based frequency-dependent microrheology of polymer gels and biological cells,” Mahaffy RE, Shih CK, MacKintosh FC, Kas J, Phys.Rev. Lett. 85, 880 (2000).

  67. “Cross-sectional Nano-photoluminesce Studies of Stark Effects in Self-Assembled Quantum Dots,” H. Htoon, O. Baklenov, A. L. Holmes, J. Keto, and C. K. Shih, Appl. Phys. Lett. 76, 700 (2000).

  68. “Non-uniform composition in InGaAs alloy quantum dots,” N. Liu, J. Tersoff, O. Baklenov, A.L.Holmes Jr., and C.K. Shih, Phys. Rev. Lett. 84, 334 (2000).

  69. “2-D dopant profile of 0.2 micron metal–oxide–semiconductor field effect transistors,” X.-D. Wang, R. Mahaffy, K. Tan, C. K. Shih, J. J. Lee, and M. Foisy, J. Vac. Sci. Tech. B 18, 560 (2000).

  70. “Comparative study of 2-D junction profiling using a dopant selective etching method and the scanning capacitance spectroscopy method,” R. Mahaffy, C.K. Shih, and H. Edwards, J. Vac. Sci. Tech. B 18, 566 (2000).

  71. “Quantitative 2-D Profiling of 0.35m Transistors with Lightly-doped-drain Structures,” A. McDonald, R. Mahaffy, X.-D. Wang, K. Kuklewicz, C.K. Shih, M. Dennis, D. Tiffin, D. Kadoch, and M. Duane, J. Vac. Sci.. Tech. B 18, 572 (2000)

  72. “Nano-photoluminescence studies of self assembled quantum dots,” H. Htoon, H. Yu, D. Kulik, J.W. Keto, O. Baklenov, A. L. Holmes, and C. K. Shih, Self-Organized Processes in Semiconductor Alloys Eds. A. Mascarenhas, B. Joyce, T. Suzuki, D. Follastaedt, MRS symposium Proceedings, v. 538, 105 (1999).

  73. “Dislocations, phason defects, and domain walls in a one-dimensional quasiperiodic superstructure of a metallic thin film,” Ph. Ebert, K.-J. Chao, Q. Niu, and C.K. Shih, Phys. Rev. Lett. 83, 3222 (1999).

  74. “Quantum dots at the nanometer scale: Interdot carrier shuffling and multiparticle states,” H. Htoon, Hongbin Yu, D. Kulik, J. W. Keto, O. Baklenov, A. L. Holmes, Jr., B. G. Streetman, and C. K. Shih, Phys. Rev. B 60, 11026 (1999).

  75. “Various factors influencing interfacial roughness of InGaAs/GaAs heterostructures: a cross-sectional scanning tunneling microscopy study,” K.-J. Chao, C.K. Shih, D.W. Gotthold and B.G. Streetman, Appl. Phys. Lett.75, 1703 (1999).

  76. “Substrate effects on the formation of flat Ag films on (110) surface of III-V semiconductors,” K.-J. Chao, Z. Zhang, Ph. Ebert, and C.K. Shih, Phys. Rev. B 60, 4988 (1999).

  77. “Quantum effect in metal overlayers on semiconductor substrate” by J.-H. Chao, Q. Niu, C.-K. Shih, Z. Suo, and Z. Zhang, Morphological Organization in Epitaxial Growth and Removal, Eds. Z. Zhang and M.G. Lagally, pp.149– 173, World Scientific, Singapore, (1998).

  78. “Growing atomically flat metal films on semiconductor substrates,” C.K. Shih, Morphological Organization in Epitaxial Growth and Removal, Eds. Z. Zhang and M.G. Lagally, pp. 438 – 449, World Scientific, Singapore, (1998).

  79. “Alloy ordering in GaInP alloys: A cross-sectional scanning tunneling microscopy study,” N. Liu, C.K. Shih, J. Geisz, A. Mascarenhas, and J.M. Olson, Appl. Phys. Lett. 73, 1979 (1998).

  80. “‘Electronic growth’ of metallic overlayers on semiconductor substrates,” Z. Zhang, Q. Niu, and C.K. Shih, Phys. Rev. Lett. 80, 5381 (1998).

  81. “Two-dimensional pn-junction delineation and individual dopant identification using scanning tunneling microscopy / spectroscopy,” K.-J. Chao, A.R. Smith, A.J. McDonald, D.-L. Kwong, B.G. Streetman, and C.K. Shih, J. Vac. Sci. Tech. B 16, 453 (1998).

  82. “Scanning Capacitance Spectroscopy: A New Analytical Technique for pn-Junction Delineation in Si Devices,” Hal Edwards, Rachel Mahaffy, Rudye McGlothlin, Richard San Martin, Elisa U, Michael Gribelyuk, R. Scott List, C. Ken Shih, and Vladimir A. Ukraintsev, Appl. Phys. Lett. 72, 698 (1998).

  83. "Determination of 2D pair correlations and pair interaction energies of In atoms in molecular beam epitaxially grown InGaAs alloys," K.-J. Chao, C.K. Shih, D.W. Gotthold, B.G. Streetman, Phys. Rev. Lett. vol. 79, 4822 (1997).

  84. "Atomic Force Microscopy and Scanning Tunneling Microscopy," C.-K. Shih and X.-D. Wang, page 149, Materials and Process Characterization of Ion Implantation, edited by M.I. Current and C.B. Yarling, Ion Beam Press, Austin, Texas, 1997.

  85. "Formation of atomically flat silver film on GaAs with a 'silver-mean' quasiperiodicity," A.R. Smith, K.-J. Chao, Q. Niu, and C.K. Shih, Science vol. 273, 226 (1996).

  86. "Identification of first and second layer Al-atoms in dilute AlGaAs using cross-sectional scanning tunneling microscopy," A.R. Smith, K.-J. Chao, C.K. Shih, A. Anselm, and B.G. Streetman, Appl. Phys. Lett. vol. 69, 1214 (1996).

  87. "A design of reflection scanning near-field optical microscope and its application to AlGaAs/GaAs heterostructures," G. Guttroff, J. Keto, C. K. Shih, A. Anselm, and B.G. Streetman, Appl. Phys. Lett. vol. 68, 3620 (1996).

  88. "2-D dopant profiling of VLSI devices using selective etching and atomic force microscopy," M.C. Barrett, C.K. Shih, M. Dennis, D. Tiffin, and Y. Li, J. Vac. Sci. and Technol B vol. 14, 447 (1996).

  89. "STM-induced chemical vapor deposition of semiconductor quantum dots," D. Samara, J.R. Williamson, C.K. Shih, and S.K. Banerjee, J. Vac. Sci. Technol. B vol. 14, 1344 (1996).

  90. "Variable low temperature scanning tunneling microscopy studies of (2x1) to c(2x4) phase transition on Si (001)," A.R. Smith, F.-K. Meng, and C.K. Shih, J. Vac. Sci. Technol. B vol. 14, 914 (1996).

  91. "Scanning tunneling microscopy investigation of the dimer vacancy-dimer vacancy interaction on the Si(001) 2xn surface," A.R. Smith, F.-K. Meng, K.-J. Chao, Z. Zhang, and C.K. Shih, J. Vac. Sci. Technol. B vol. 14, 909 (1996).

  92. "Direct determination of exact charge states of surface point defects using scanning tunneling microscopy: the Case of As-vacancy on GaAs(110)," K.-J. Chao, A.R. Smith, and C.K. Shih, Phys. Rev. B. vol. 53, 6935 (1996).

  93. "Application of scanning tunneling microscopy to determine the charge state of surface point defects," K.-J. Chao, A.R. Smith, and C.K. Shih, J. Vac. Sci. Technol. B vol. 14, 948 (1996).

  94. "Thermal Formation of Zn-dopant - vacancy defect complexes on InP(110) surfaces," Ph. Ebert, M. Heinrich, M. Simon, C. Domke, K. Urban, C.K. Shih, M.B. Webb, and M.G. Lagally, Phys. Rev. B. vol. 53, 4580 (1996).

  95. "Temperature dependent compensation of Zn-dopant atoms by vacancies in III-V semiconductor surfaces," Ph. Ebert, M. Heinrich, K. Urban, K.-J. Chao, A.R. Smith, and C.K. Shih, J. Vac. Sci. and Technol A vol. 14, 1807 (1996).

  96. "Dimer vacancy - dimer vacancy interactions on the Si(001) surface: The nature of 2xn structure, F. K. Men, A.R. Smith, K.-J. Chao, Z. Zhang, and C.K. Shih, Phys. Rev. B 52, R8650 (1995).

  97. "Cross-sectional STM of AlAs/GaAs short period superlattices: the influence of growth interrupt on the interfacial structure," A.R. Smith, K.-J. Chao, C.K. Shih, Y.C. Shih, and B.G. Streetman, Appl. Phys. Lett. 66, 478 (1995).

  98. "A new variable low-temperature scanning tunneling microscope for use in ultra-high-vacuum," A.R. Smith and C.K. Shih, Rev. Sci. Instr. 66, 2499 (1995).

  99. "Double-tip STM for surface analysis," Q. Niu, M. Chang, and C.K. Shih, Phys. Rev. B 51, 5502 (1995).

  100. "2-D dopant profiling in Si-VLSI devices," M.C. Barret, M. Dennis, Y. Li, D. Tiffin, and C.K. Shih, IEEE Electron Device Letters 16, 118 (1995).

  101. "Influence of various growth parameters on the interface abruptness of AlAs/GaAs short period superlattices," A.R. Smith, K.-J. Chao, C.K. Shih, Y.C. Shih, K.A. Anselm, and B.G. Streetman, J. Vac. Sci. and Technol B 13, 1824 (1995).

  102. "A new high-resolution two-dimensional micropositioing device for scanning probe microscopy applications," A.R. Smith and C.K. Shih, Rev. Sci. Instr. 65, 3216 (1994).

  103. "A comparative study of cross-sectional scanning tunneling microscopy / spectroscopy on III-V hetero- and homostructures: UHV-cleaved vs. sulfide-passivated," A.R. Smith, S. Gwo, Y.C. Shih, B.G. Streetman, and C.K. Shih, J. Vac. Sci. and Technol B 12, 2610 (1994).

  104. "Cross-sectional scanning tunneling microscopy of doped and undoped AlGaAs/GaAs heterostructures," S. Gwo, K.-J. Chao, and C. K. Shih, Appl. Phys. Lett. 64, 492 (1994)

  105. "Cross-sectional scanning tunneling microscopy and spectroscopy of passivated III-V heterostructures," S. Gwo, A.R. Smith, K.-J. Chao, C.K. Shih, K. Sadra, Y.C. Shih, and B.G. Streetman, J. Vac. Sci. and Technol A 12, 2005 (1994).

  106. "Direct Mapping of Electronic Structure Across Al0.3Ga0.7As/GaAs Heterojunctions: Band Offsets, Asymmetrical Transition Widths, and Multiple-Valley Band Structures," S. Gwo, K.-J. Chao, C. K. Shih, K. Sadra, and B. G. Streetman, Phys. Rev. Lett. 71 1883, (1993).

  107. "Vacancy migration, adatom motion, and atomic bistability on the GaAs(110) surface studied by scanning tunneling microscopy", S. Gwo, A. R. Smith, and C. K. Shih, J. Vac. Sci. and Technol A 11, 1644 (1993) .

  108. "Site-selective imaging in scanning tunneling microscopy of graphite: The nature of site-asymmetry," S. Gwo and C. K. Shih, Phys. Rev. B 47, 13059 (1993).

  109. "Scanning tunneling microscopy of doping and compositional III-V homo- and heterostructures," S. Gwo, K.-J. Chao, C.K. Shih, K. Sadra, and B.G. Streetman, J. Vac. Sci. and Technol B 11, 1509 (1993).

  110. "Scanning tunneling microscopy of GaAs multiple pn junctions," S. Gwo, A. R. Smith, C. K. Shih, K. Sadra, and B. G. Streetman, Appl. Phys. Lett. 61, 1104 (1992).

  111. "Scanning tunneling microscopy and spectroscopy of BiSrCaCuO 2212 compounds," C. K. Shih, R. M. Fennstra, and G. V. Chandrashekhar, Phys. Rev. B. 43, 7919 (1991).

  112. "Electronic structure of NiO: Correlation and band effects," Z.-X. Shen, R.S. List, D.S. Dessau, O. Jepsen, A.J. Arko, R. Barttlet, C. K. Shih, F. Parmigiani, B.O. Wells, J.C. Hwang, and P.A.P. Lindberg, Phys. Rev. B 44, 3604 (1991).

  113. "Aspects of correlation effects, antiferromagnetic order, and translational symmetry of the electronic structure of NiO and CoO," Z.-X. Shen, C. K. Shih, O. Jepsen, W. E. Spicer, I. Lindau, and J. W. Allen, Phys. Rev. Lett. 64, 2442 (1990).

  114. "Scanning tunneling microscopy and spectroscopy of thin metal films on the GaAs(110) Surface," C.K. Shih, R.M. Feenstra, and P. Mårtensson, J. Vac. Sci. and Technol, A8, 3379 (1990).

  115. "Scanning tunneling microscopy and spectroscopy of cleaved BiSrCaCuO high Tc superconductors," C.K. Shih, Modern Physics Letters B 3 , 1113 (1989).

  116. "Surface structural and electronic properties of cleaved single crystals of BiSrCaCuO compounds: A scanning tunneling microscopy study," C.K. Shih, R.M. Feenstra, J.R. Kirtley, and G.V. Chandrashekhar, Phys. Rev. B 40, 2682 (1989).

  117. "Scanning tunneling microscopy and first-principles theory of Sn/GaAs(110) surface," C.K. Shih, E. Kaxiras, R.M. Feenstra, and K.C. Pandey, Phys. Rev. B 40, 10044 (1989).

  118. "k-resolved alloy bowing in pseudobinary In1-xGaxAs alloys," J. Hwang, P. Pianetta, Y.-C. Pao, C.K. Shih, Z.-X. Shen, P.A.P. Lindberg, and R. Chow, Phys. Rev. Lett. 61, 877 (1988).

  119. "Use of low temperature to reduce intermixing at metal:HgCdTe contacts," G.P. Carey, D.J. Freeman, A.K. Wahi, C.K. Shih and W.E. Spicer, J. Vac. Sci. and Technol. A 6, 2736 (1988).

  120. "Natural band lineups in II-VI compound semiconductors and their alloys," C.K. Shih, A.K. Wahi, I. Lindau and W.E. Spicer, J. Vac. Sci. and Technol. A 6, 2640 (1988).

  121. "The effect of strain on the band structure of GaAs(001) and In0.2Ga0.8As(001)," J. Hwang, C.K. Shih, P. Pianetta, L.D. Kubiak, H. Stulen, L.R. Dawson, Y.–C. Pao, and J. Harris, Appl. Phys. Lett. 52, 308, (1988).

  122. "Determination of the natural valence band offset in In1-xGaxAs system," J. Hwang, C.K. Shih, P. Pianetta, W.E. Spicer, Y.-C. Pao, and J. Harris, Appl. Phys. Lett. 51, 1632, (1987).

  123. "Determination of a natural valence band offset: the case of HgTe and CdTe," C.K. Shih and W.E. Spicer, Phys. Rev. Lett. 58, 2594 (1987).

  124. "Natural valence band offset of HgTe and CdTe," C.K. Shih and W.E. Spicer, J. Vac. Sci. and Technol. B 5, 1231 (1987).

  125. "Angle-resolved photoemission study of the alloy scattering effect in HgCdTe alloys," C.K. Shih, J.A. Silberman, A.K. Wahi, G.P. Carey, I. Lindau, W.E. Spicer, A. Sher and M. Berding, J. Vac. Sci. and Technol. A 5, 3026(1987).

  126. "Photoemission study of the core level shifts in HgCdTe, CdMnTe and HgZnTe alloys," C.K. Shih, W.E. Spicer, A. Sher, and J.K. Furdyna, J. Vac. Sci. and Technol. A 5, 3031 (1987).

  127. "Electron beam induced Hg desorption and the electronic structure of the Hg depleted surface of Hg1-xCdxTe," C.K. Shih, D.J. Friedman, K.A. Bertness, I. Lindau, and W.E. Spicer, J. Vac. Sci. and Technol. A 4, 1997 (1986).

  128. "The Ag/(Hg,Cd)Te and Al/(Hg,Cd)Te interfaces," D.J. Friedman, G.P. Carey, C.K. Shih, I. Lindau, W.E. Spicer, and J.A. Wilson, J. Vac. Sci. Technol. A 4, 1977 (1986).

  129. "Diffusion of Ag and Hg at the Ag/(Hg,Cd)Te interface," D.J. Friedman, G.P. Carey, C.K. Shih, I. Lindau, W.E. Spicer, and J.A. Wilson, Appl. Phys. Lett. 48, 44 (1986).

  130. "Effects Influencing the Structural Integrity of Semiconductors and Their Alloys," A. Sher, A.-B. Chen, W.E. Spicer, and C.K. Shih, J. Vac. Sci. Technol. A 3, 105 (1985).

  131. "Angle Resolved Photoemission Spectroscopy of Hg1-xCdxTe," J.A. Silberman, D.A. Laser, C.K. Shih, D.J. Friedman, I. Lindau, W.E. Spicer, and J.A. Wilson, J. Vac. Sci. Technol. A 3, 233 (1985).

  132. "Bond-length relaxation in pseudo-binary alloys," C.K. Shih, W.E. Spicer, W.A. Harrison, and A. Sher, Phys. Rev. B 31, 1139 (1985).




 

  
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