Publications



2000 - current

 

·         “Quality factors of qubit rotations in single semiconductor quantum dots,” Q. Q. Wang, A. Muller, P. Bianucci, C. K. Shih, and Q.K. Xue, Appl. Phys. Lett. (accepted for publications, 2005)

·         “Quantum Growth of Magnetic Nanoplatelets of Co on Si with High Blocking Temperature,” M-H Pan, H. Liu, J-Z Wang, J-F Jia, Q-K Xue, J-L Li,‡ S. Qin, U. M. Mirsaidov, X-R Wang, J. T. Markert, Z. Zhang, and C. K. Shih, Nanoletters Vol. 5, No. 1, 87-90 (2005)

·         “Spatial correlation-anticorrelation in strain-driven self-assembled InGaAs quantum dots,” X.-D. Wang, N. Liu, C. K. Shih, S. Govindaraju, and A. L. Holmes, Jr., Appl. Phys. Lett. 85, 1356 (2004).

·          “Experimental realization of the one qubit Deutsch-Jozsa algorithm in a quantum dot,” P. Bianucci, A. Muller, Q. Q. Wang, Q.-K. Xue, C. Piermarocchi, and C. K. Shih, Phys. Rev. B 69,161303(R), 2004.

·         Wan Young Jang, N.N.Kulkarni, C.K. Shih and Zhen Yao, “Electrical characterization of individual carbon nanotubes grown in nanoporous anodic alumina templates”, Appl. Phys. Lett. 84, 1177, (2004).

·         C.–S. Jiang, S.–C. Li, H.–B. Yu, D. Eom,  X. –D. Wang, P. Ebert, J.–F. Jia, Q.–K. Xue, and C.K. Shih, “Building Pb nano-mesas with atomic layer precision,” Phys. Rev. Lett. 92, 106104 (2004)

·         Ho-Ki Lyeo, A.A. Khajetoorians, Li Shi, Kevin Pipe, Rajeev J. Ram, Ali Shakouri, and C.K. Shih, “Mapping Thermoelectric Power of Semiconductor Junctions with Nanometer Resolution,” Science 303, 186 (2004).

·         R. E. Mahaffy, S. Park, E. Gerde, F. Mackintosh, J. Käs, and C. K. Shih “Quantitative analysis of the viscoelastic properties in thin regions of fibroblasts using AFM,” Biophysical Journal 86:1777-1793 (2004)

·         D. Kulik, H. Htoon, and C. K. Shih, Yadong Li “Photoluminescence properties of single CdS nanorods,” J. Appl. Phys. 95, 1056 (2004)

·         Muller, Q. Q. Wang, P. Bianucci, C. K. Shih,  and Q. K. Xue, "Determination of Anisotropic Dipole Moments ..." Appl. Phys. Lett. 84, 981 (2004).

  • H. Htoon and C. K. Shih, “Ultrafast Coherent Dynamics In Semiconductor Quantum Dots.” Chapter 3, “Ultrafast Dynamical Processes in Semiconductors” edited by K. T. Tsen. (Springer-Verlag, Heidelberg, 2004).

·         “Quantum coherence phenomena in semiconductor quantum dots: quantum interference, decoherence and Rabi oscillation,” H. Htoon, C. K. Shih and T. Takagahara, in Chao, Solitons, and Fractals, vol. 16, page 439, (2003).

·         “Effect of the Si substrate structure on the growth of two-dimensional thin Ag-films,” C.-S. Jiang, Hongbin Yu, C.-K. Shih, Ph. Ebert, Surface Science. 518, 63 (2002).

·         “Probing the step structure of buried metal/semiconductor interfaces using quantized electron states: The case of Pb on Si(111) 6x6-Au,” H.-B.Yu, C.-S. Jiang, P. Ebert, C.-K. Shih, Appl. Phys. Lett. 81, 2005 (2002).

·         “Cross-sectional scanning tunneling microscopy study of InGaAs quantum dots on GaAs(001) grown by heterogeneous droplet epitaxy,” N. Liu, H.-K. Lyeo, C.-K. Shih, M. Oshima, T. Mano, N. Koguchi, Appl. Phys. Lett.  80, 4345 (2002).

·         “Interplay of Rabi oscillations and quantum interference in semiconductor quantum dots,” H. Htoon, T. Takagahara, D. Kulik, O. Baklenov, A.L. Holmes Jr., and C.K. Shih, Phys. Rev. Lett. 88, 087401 (2002)

·         “Quantitative Determination of the Metastability of Flat Ag Overlayers on GaAs(110),” Hongbin Yu, C. S. Jiang, Ph. Ebert, X. D. Wang, J. M. White, Qian Niu, Zhenyu Zhang, and C. K. Shih, Phys. Rev. Lett. 88, 016102 (2002).

·         “Scanning tunneling spectroscopy of quantum well and surface states of thin Ag films grown on GaAs(110),” Jiang CS, Yu HB, Wang XD, Shih CK, Ebert P, Phys. Rev. B  64, 235410 (2001).

·         “Temperature-Dependent Electron Transport through Silver Nanocrystal Superlattices,” R. Christopher Doty,  Hongbin Yu,  C. Ken Shih, Brian A. Korgel, J. Phys. Chem. B  105, 8291 (2001).

·         “Carrier relaxation and quantum decoherence of excited states in self-assembled quantum dots,” H. Htoon, D. Kulik, O. Baklenov, A.L. Holmes Jr., T. Takagahara, C.K. Shih, Phys. Rev. B 63, 241303, (2001).

·         “Viscoelastic and active response of neuronal growth cones to mechanical stimuli by AFM,” Lakadamyali M, Mahaffy R, Furnish B, Bayer J, Mackintosh F, Shih CK, Schmidt C, Kas J, Biophys. J.(Annual Meeting Abstracts) (2001).

·         “Scanning tunneling microscopy of defects in quasiperiodically ordered surfaces,” Ebert Ph, Chao KJ, Niu Q, Shih CK, Plummer EW, Urban K, Mat. Sci. Eng. A  294, 826 (2000).

·         “Scanning probe-based frequency-dependent microrheology of polymer gels and biological cells,” Mahaffy RE, Shih CK, MacKintosh FC, Kas J, Phys.Rev. Lett. 85, 880 (2000).

·          “Cross-sectional Nano-photoluminesce Studies of Stark Effects in Self-Assembled Quantum Dots,” H. Htoon, O. Baklenov, A. L. Holmes, J. Keto, and C. K. Shih, Appl. Phys. Lett. 76, 700 (2000).

·         “Non-uniform composition in InGaAs alloy quantum dots,” N. Liu, J. Tersoff, O. Baklenov, A.L.Holmes Jr., and C.K. Shih, Phys. Rev. Lett. 84, 334 (2000).

·         “2-D dopant profile of 0.2 micron metal–oxide–semiconductor field effect transistors,” X.-D. Wang, R. Mahaffy, K. Tan, C. K. Shih, J. J. Lee, and M. Foisy, J. Vac. Sci. Tech. B 18, 560 (2000). 

·         “Comparative study of 2-D junction profiling using a dopant selective etching method and the scanning capacitance spectroscopy method,” R. Mahaffy, C.K. Shih, and H. Edwards, J. Vac. Sci. Tech. B 18, 566 (2000).

·         “Quantitative 2-D Profiling of 0.35m Transistors with Lightly-doped-drain Structures,” A. McDonald, R. Mahaffy, X.-D. Wang, K. Kuklewicz, C.K. Shih, M. Dennis, D. Tiffin, D. Kadoch, and M. Duane, J. Vac. Sci.. Tech. B 18, 572 (2000)

1995 - 1999

·         “Nano-photoluminescence studies of self assembled quantum dots,” H. Htoon, H. Yu, D. Kulik, J.W. Keto, O. Baklenov, A. L. Holmes, and C. K. Shih, Self-Organized Processes in Semiconductor Alloys  Eds. A. Mascarenhas, B. Joyce, T. Suzuki, D. Follastaedt, MRS symposium Proceedings, v. 538, 105 (1999). 

·   “Dislocations, phason defects, and domain walls in a one-dimensional quasiperiodic superstructure of a metallic thin film,” Ph. Ebert, K.-J. Chao, Q. Niu, and C.K. Shih, Phys. Rev. Lett. 83, 3222 (1999).

  • “Quantum dots at the nanometer scale: Interdot carrier shuffling and multiparticle states,” H. Htoon, Hongbin Yu, D. Kulik, J. W. Keto, O. Baklenov, A. L. Holmes, Jr., B. G. Streetman, and C. K. Shih, Phys. Rev. B  60, 11026 (1999).

·   “Various factors influencing interfacial roughness of InGaAs/GaAs heterostructures: a cross-sectional scanning tunneling microscopy study,” K.-J. Chao, C.K. Shih, D.W. Gotthold and B.G. Streetman, Appl. Phys. Lett.75, 1703 (1999).

·   “Substrate effects on the formation of flat Ag films on (110) surface of III-V semiconductors,” K.-J. Chao, Z. Zhang, Ph. Ebert, and C.K. Shih,  Phys. Rev. B 60, 4988 (1999).

·   “Quantum effect in metal overlayers on semiconductor substrate” by J.-H. Chao, Q. Niu, C.-K. Shih, Z. Suo, and Z. Zhang,  Morphological Organization in Epitaxial Growth and Removal, Eds. Z. Zhang and M.G. Lagally, pp.149– 173, World Scientific, Singapore, (1998).

·   “Growing atomically flat metal films on semiconductor substrates,” C.K. Shih, Morphological Organization in Epitaxial Growth and Removal, Eds. Z. Zhang and M.G. Lagally, pp. 438 – 449, World Scientific, Singapore, (1998).

·   “Alloy ordering in GaInP alloys: A cross-sectional scanning tunneling microscopy study,” N. Liu, C.K. Shih, J. Geisz, A. Mascarenhas, and J.M. Olson, Appl. Phys. Lett. 73, 1979 (1998).

·   “‘Electronic growth’ of metallic overlayers on semiconductor substrates,” Z. Zhang, Q. Niu, and C.K. Shih, Phys. Rev. Lett. 80, 5381 (1998).

·   “Two-dimensional pn-junction delineation and individual dopant identification using scanning tunneling microscopy / spectroscopy,” K.-J. Chao, A.R. Smith, A.J. McDonald, D.-L. Kwong, B.G. Streetman, and C.K. Shih, J. Vac. Sci. Tech. B 16, 453 (1998).

·   “Scanning Capacitance Spectroscopy: A New Analytical Technique for pn-Junction Delineation in Si Devices,” Hal Edwards, Rachel Mahaffy, Rudye McGlothlin, Richard San Martin, Elisa U, Michael Gribelyuk, R. Scott List, C. Ken Shih, and Vladimir A. Ukraintsev, Appl. Phys. Lett. 72, 698 (1998).

·   "Determination of 2D pair correlations and pair interaction energies of In atoms in molecular beam epitaxially grown InGaAs alloys," K.-J. Chao,  C.K. Shih, D.W. Gotthold, B.G. Streetman, Phys. Rev. Lett. vol. 79, 4822 (1997).

·   "Atomic Force Microscopy and Scanning Tunneling Microscopy," C.-K. Shih and X.-D. Wang, page 149, Materials and Process Characterization of Ion Implantation, edited by M.I. Current and C.B. Yarling, Ion Beam Press, Austin, Texas, 1997.

·   "Formation of atomically flat silver film on GaAs with a 'silver-mean' quasiperiodicity," A.R. Smith, K.-J. Chao, Q. Niu, and C.K. Shih, Science vol. 273, 226 (1996).

·   "Identification of first and second layer Al-atoms in dilute AlGaAs using cross-sectional scanning tunneling microscopy," A.R. Smith, K.-J. Chao, C.K. Shih, A. Anselm, and B.G. Streetman, Appl. Phys. Lett. vol. 69, 1214 (1996).

·   "A design of reflection scanning near-field optical microscope and its application to AlGaAs/GaAs heterostructures," G. Guttroff, J. Keto, C. K. Shih, A. Anselm, and B.G. Streetman, Appl. Phys. Lett. vol. 68, 3620 (1996).

·   "2-D dopant profiling of VLSI devices using selective etching and atomic force microscopy," M.C. Barrett, C.K. Shih, M. Dennis, D. Tiffin, and Y. Li, J. Vac. Sci. and Technol B vol. 14, 447 (1996).

·   "STM-induced chemical vapor deposition of semiconductor quantum dots,"  D. Samara, J.R. Williamson, C.K. Shih, and S.K. Banerjee, J. Vac. Sci. Technol. B vol. 14, 1344 (1996).

·   "Variable low temperature scanning tunneling microscopy studies of  (2x1) to c(2x4) phase transition on Si (001)," A.R. Smith, F.-K. Meng, and C.K. Shih, J. Vac. Sci. Technol. B vol. 14, 914 (1996).

·   "Scanning tunneling microscopy investigation of the dimer vacancy-dimer vacancy interaction on the Si(001) 2xn surface," A.R. Smith, F.-K. Meng, K.-J. Chao, Z. Zhang, and C.K. Shih, J. Vac. Sci. Technol. B vol. 14, 909 (1996).

·   "Direct determination of exact charge states of surface point defects using scanning tunneling microscopy: the Case of As-vacancy on GaAs(110),"  K.-J. Chao, A.R. Smith, and C.K. Shih, Phys. Rev. B. vol. 53, 6935 (1996).

·   "Application of scanning tunneling microscopy to determine the charge state of surface point defects," K.-J. Chao, A.R. Smith, and C.K. Shih, J. Vac. Sci. Technol. B vol. 14, 948 (1996).

·   "Thermal Formation of Zn-dopant - vacancy defect complexes on InP(110) surfaces," Ph. Ebert, M. Heinrich, M. Simon, C. Domke, K. Urban, C.K. Shih, M.B. Webb, and M.G. Lagally, Phys. Rev. B. vol. 53, 4580 (1996).

·   "Temperature dependent compensation of Zn-dopant atoms by vacancies in III-V semiconductor surfaces," Ph. Ebert, M. Heinrich, K. Urban, K.-J. Chao, A.R. Smith, and C.K. Shih, J. Vac. Sci. and Technol A vol. 14, 1807 (1996).

·   "Dimer vacancy - dimer vacancy interactions on the Si(001) surface: The nature of 2xn structure, F. K. Men, A.R. Smith, K.-J. Chao, Z. Zhang, and C.K. Shih, Phys. Rev. B 52, R8650 (1995).

·   "Cross-sectional STM of AlAs/GaAs short period superlattices: the influence of growth interrupt on the interfacial structure," A.R. Smith,  K.-J. Chao, C.K. Shih, Y.C. Shih, and B.G. Streetman, Appl. Phys. Lett. 66, 478 (1995).

·   "A new variable low-temperature scanning tunneling microscope for use in ultra-high-vacuum," A.R. Smith and C.K. Shih, Rev. Sci. Instr. 66, 2499 (1995).

·   "Double-tip STM for surface analysis," Q. Niu, M. Chang, and C.K. Shih, Phys. Rev. B 51, 5502 (1995).

·   "2-D dopant profiling in Si-VLSI devices," M.C. Barret, M. Dennis, Y. Li, D. Tiffin, and C.K. Shih, IEEE Electron Device Letters 16, 118 (1995).

·   "Influence of various growth parameters on the interface abruptness of AlAs/GaAs short period superlattices," A.R. Smith,  K.-J. Chao, C.K. Shih, Y.C. Shih, K.A. Anselm, and B.G. Streetman, J. Vac. Sci. and Technol B 13, 1824 (1995).

1990-1994

  • "A new high-resolution two-dimensional micropositioing device for scanning probe microscopy applications," A.R. Smith and C.K. Shih, Rev. Sci. Instr.  65, 3216 (1994).
  • "A comparative study of cross-sectional scanning tunneling microscopy / spectroscopy on III-V hetero- and homostructures: UHV-cleaved vs. sulfide-passivated," A.R. Smith, S. Gwo, Y.C. Shih, B.G. Streetman, and C.K. Shih, J. Vac. Sci. and Technol B 12,  2610  (1994).
  • "Cross-sectional scanning tunneling microscopy of doped and undoped AlGaAs/GaAs heterostructures," S. Gwo, K.-J. Chao, and C. K. Shih, Appl. Phys. Lett. 64, 492 (1994)
  • "Cross-sectional scanning tunneling microscopy and spectroscopy of passivated III-V heterostructures," S. Gwo, A.R. Smith, K.-J. Chao, C.K. Shih, K. Sadra, Y.C. Shih, and B.G. Streetman, J. Vac. Sci. and Technol A 12, 2005  (1994).
  • "Direct Mapping of Electronic Structure Across Al0.3Ga0.7As/GaAs Heterojunctions: Band Offsets, Asymmetrical Transition Widths, and Multiple-Valley Band Structures," S. Gwo, K.-J. Chao, C. K. Shih, K. Sadra, and B. G. Streetman, Phys. Rev. Lett. 71 1883, (1993).
  • "Vacancy migration, adatom motion, and atomic bistability on the GaAs(110) surface studied by scanning tunneling microscopy", S. Gwo, A. R. Smith, and C. K. Shih, J. Vac. Sci. and Technol A 11, 1644 (1993) .
  • "Site-selective imaging in scanning tunneling microscopy of graphite: The nature of site-asymmetry," S. Gwo and C. K. Shih, Phys. Rev. B 47, 13059 (1993).
  • "Scanning tunneling microscopy of doping and compositional III-V homo- and heterostructures," S. Gwo, K.-J. Chao, C.K. Shih, K. Sadra, and B.G. Streetman, J. Vac. Sci. and Technol B 11, 1509 (1993).
  • "Scanning tunneling microscopy of GaAs multiple pn junctions," S. Gwo, A. R. Smith, C. K. Shih, K. Sadra, and B. G. Streetman, Appl. Phys. Lett. 61, 1104 (1992).
  • "Scanning tunneling microscopy and spectroscopy of BiSrCaCuO  2212 compounds," C. K. Shih, R. M. Fennstra, and G. V. Chandrashekhar, Phys. Rev. B. 43, 7919 (1991).
  • "Electronic structure of NiO: Correlation and band effects," Z.-X. Shen, R.S. List, D.S. Dessau, O. Jepsen, A.J. Arko, R. Barttlet, C. K. Shih, F. Parmigiani, B.O. Wells, J.C. Hwang, and P.A.P. Lindberg, Phys. Rev. B 44, 3604 (1991).
  • "Aspects of correlation effects, antiferromagnetic order, and translational symmetry of the electronic structure of NiO and CoO," Z.-X. Shen, C. K. Shih, O. Jepsen, W. E. Spicer, I. Lindau, and J. W. Allen, Phys. Rev. Lett. 64, 2442 (1990).
  • "Scanning tunneling microscopy and spectroscopy of thin metal films on the GaAs(110) Surface," C.K. Shih, R.M. Feenstra, and P. Mårtensson, J. Vac. Sci. and Technol, A8, 3379 (1990).

 

Before 1990

  • "Scanning tunneling microscopy and spectroscopy of cleaved BiSrCaCuO  high Tc superconductors," C.K. Shih,  Modern Physics Letters B 3 , 1113 (1989).
  • "Surface structural and electronic properties of cleaved single crystals of BiSrCaCuO compounds: A scanning tunneling microscopy study," C.K. Shih, R.M. Feenstra, J.R. Kirtley, and G.V. Chandrashekhar,  Phys. Rev. B 40, 2682 (1989).
  • "Scanning tunneling microscopy and first-principles theory of Sn/GaAs(110) surface," C.K. Shih, E. Kaxiras, R.M. Feenstra, and K.C. Pandey, Phys. Rev. B 40, 10044 (1989).
  • "k-resolved alloy bowing in pseudobinary In1-xGaxAs alloys," J. Hwang, P. Pianetta, Y.-C. Pao, C.K. Shih, Z.-X. Shen, P.A.P. Lindberg, and R. Chow, Phys. Rev. Lett. 61, 877 (1988).
  • "Use of low temperature to reduce intermixing at metal:HgCdTe contacts," G.P. Carey, D.J. Freeman, A.K. Wahi, C.K. Shih and W.E. Spicer, J. Vac. Sci. and Technol. A 6, 2736 (1988).
  • "Natural band lineups in II-VI compound semiconductors and their alloys," C.K. Shih, A.K. Wahi, I. Lindau and W.E. Spicer, J. Vac. Sci. and Technol. A 6, 2640 (1988).
  • "The effect of strain on the band structure of GaAs(001) and In0.2Ga0.8As(001)," J. Hwang, C.K. Shih, P. Pianetta, L.D. Kubiak, H. Stulen, L.R. Dawson, Y.–C. Pao, and J. Harris, Appl. Phys. Lett. 52, 308, (1988).
  • "Determination of the natural valence band offset in In1-xGaxAs system," J. Hwang, C.K. Shih, P. Pianetta, W.E. Spicer, Y.-C. Pao, and J. Harris, Appl. Phys. Lett. 51, 1632, (1987).
  • "Determination of a natural valence band offset: the case of HgTe and CdTe," C.K. Shih and W.E. Spicer, Phys. Rev. Lett. 58, 2594 (1987).
  • "Natural valence band offset of HgTe and CdTe," C.K. Shih and W.E. Spicer, J. Vac. Sci. and Technol. B 5, 1231 (1987).
  • "Angle-resolved photoemission study of the alloy scattering effect in HgCdTe alloys," C.K. Shih, J.A. Silberman, A.K. Wahi, G.P. Carey, I. Lindau, W.E. Spicer, A. Sher and M. Berding,  J. Vac. Sci. and Technol. A 5, 3026(1987).
  • "Photoemission study of the core level shifts in HgCdTe, CdMnTe and HgZnTe alloys," C.K. Shih, W.E. Spicer, A. Sher, and J.K. Furdyna,  J. Vac. Sci. and Technol. A 5, 3031 (1987).
  • "Electron beam induced Hg desorption and the electronic structure of the Hg depleted surface of Hg1-xCdxTe," C.K. Shih, D.J. Friedman, K.A. Bertness, I. Lindau, and W.E. Spicer,  J. Vac. Sci. and Technol. A 4, 1997 (1986).
  • "The  Ag/(Hg,Cd)Te and Al/(Hg,Cd)Te interfaces," D.J. Friedman, G.P. Carey, C.K. Shih, I. Lindau, W.E. Spicer, and J.A. Wilson,  J. Vac. Sci. Technol. A 4, 1977 (1986).
  • "Diffusion of Ag and Hg at the  Ag/(Hg,Cd)Te interface," D.J. Friedman, G.P. Carey, C.K. Shih, I. Lindau, W.E. Spicer, and J.A. Wilson,  Appl. Phys. Lett. 48, 44 (1986).
  • "Effects Influencing the Structural Integrity of Semiconductors and Their Alloys," A. Sher, A.-B. Chen, W.E. Spicer, and C.K. Shih, J. Vac. Sci. Technol. A 3, 105 (1985).
  • "Angle Resolved Photoemission Spectroscopy of Hg1-xCdxTe," J.A. Silberman, D.A. Laser, C.K. Shih, D.J. Friedman, I. Lindau, W.E. Spicer, and J.A. Wilson, J. Vac. Sci. Technol. A 3, 233 (1985).
  • "Bond-length relaxation in pseudo-binary alloys," C.K. Shih, W.E. Spicer, W.A. Harrison, and A. Sher, Phys. Rev. B 31, 1139 (1985).