Single-wafer Surface Wave Accelerator

Plasma is not the only medium capable of withstanding ultra-high fields. It is well-known that electron-rich materials (such as metals) do not perform when subjected to strong electric fields. Dielectrics and wide bandgap semiconductors perform much better. We have identified an extremely interesting material, silicon carbide (SiC), that can withstand ultra-high electric fields without breaking down, and also has a negative dielectric permittivity. By depositing a thin film of SiC on a Si wafer, we are making a surface-wave accelerator. Electrons are accelerated by the electric field of a surface phonon polariton.

Fig.1 Single wafer acceleration scheme

To learn more about our progress in making a single-wafer accelerator, please check out our recent poster presented at the "NanoNight" poster session at Welch Hall: